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AlGaN/GaN异质结Ni/Au肖特基表面处理及退火研究
引用本文:王冲,冯倩,郝跃,万辉.AlGaN/GaN异质结Ni/Au肖特基表面处理及退火研究[J].物理学报,2006,55(11):6085-6089.
作者姓名:王冲  冯倩  郝跃  万辉
作者单位:西安电子科技大学微电子研究所,西安 710071;宽禁带半导体材料与器件教育部重点实验室,西安 710071
基金项目:重大科技预研项目;国家重点基础研究发展计划(973计划)
摘    要:采用O2等离子体及HF溶液对AlGaN/GaN异质结材料进行表面处理后,Ni/Au肖特基接触特性比未处理有了明显改善,反向泄漏电流减小3个数量级.对制备的肖特基接触进行200—600℃ 5min的N2气氛退火,发现退火冷却后肖特基反向泄漏电流随退火温度增大进一步减小.N2气中600℃退火后肖特基二极管C-V特性曲线在不同频率下一致性变好,这表明退火中Ni向材料表面扩散减小了表面陷阱密度;C-V特性曲线随退火温度增大向右移动,从二维电子气耗尽电压绝对值减小反映了肖特基势垒的提高. 关键词: AlGaN/GaN 肖特基接触 表面处理 退火

关 键 词:AlGaN/GaN  肖特基接触  表面处理  退火
文章编号:1000-3290/2006/55(11)/6085-05
收稿时间:02 17 2006 12:00AM
修稿时间:2006-02-172006-02-28

Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures
Wang Chong,Feng Qian,Hao Yue,Wan Hui.Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures[J].Acta Physica Sinica,2006,55(11):6085-6089.
Authors:Wang Chong  Feng Qian  Hao Yue  Wan Hui
Abstract:After pre-metallization processing of AlGaN/GaN heterostructure with O2 plasma and HF solution, the Ni/Au Schottky contact characteristics were improved obviously and reverse leakage current reduced by three orders. In addition, annealing experiments were carried out at 200—600℃ for 5min in N2 atmosphere on many batches of Schottky diodes, the reverse leakage current decreased further with annealing temperature increasing. Especially after annealing at 600℃ for 5min in N2 atmosphere, the better uniformity of C-V characteristics at different frequencies indicated that surface trap density was reduced when Ni diffused to AlGaN/GaN surface during annealing. On the other hand, the C-V curves moved to the right and the reduction of absolute value of 2D electron gas depletion voltage proved that the Schottky barrier height was elevated when the annealing temperature increased.
Keywords:AlGaN/GaN
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