| 极化诱导的内建电场对Mn δ掺杂的GaN/AlGaN量子阱居里温度的调制 |
| |
| 引用本文： | 申晔,邢怀中,俞建国,吕斌,茅惠兵,王基庆.极化诱导的内建电场对Mn δ掺杂的GaN/AlGaN量子阱居里温度的调制[J].物理学报,2007,56(6):3453-3457. |
| |
| 作者姓名： | 申晔 邢怀中 俞建国 吕斌 茅惠兵 王基庆 |
| |
| 作者单位： | (1)东华大学物理系，上海 200051; (2)上海华东师范大学信息学院电子系，上海 200062 |
| |
| 基金项目： | 国家自然科学基金;国家重点实验室基金 |
| |
| 摘 要： | 采用传输矩阵方法分析极化诱导的内建电场对Mn δ掺杂的GaN/AlxGa1-xN量子阱居里温度(TC)的调制作用.通过解薛定谔方程计算出在不同的内建电场条件下半导体量子阱局域态内的基态空穴能级和波函数分布情况，并在此基础上确定量子阱内Mn δ掺杂情况下TC随内建电场的变化趋势，分析了不同量子阱结构引起的内建电场分布变化及其对TC的影响.在耦合双量子阱中通过调节左右阱的不对称性可以得到TC近3倍的增长.
关键词：
GaN
量子阱
内建电场
居里温度
|
| 关 键 词： | GaN 量子阱 内建电场 居里温度 |
| 文章编号： | 1000-3290/2007/56(06)/3453-05 |
| 收稿时间： | 2006-07-10 |
| 修稿时间： | 2006-07-10 |
Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells |
| |
| Shen Ye,Xing Huai-Zhong,Yu Jian-Guo,Lü Bin,Mao Hui-Bing,Wang Ji-Qing.Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells[J].Acta Physica Sinica,2007,56(6):3453-3457. |
| |
| Authors: | Shen Ye Xing Huai-Zhong Yu Jian-Guo Lü Bin Mao Hui-Bing Wang Ji-Qing |
| |
| Institution: | 1. The Department of Electronic Science and Engineering, East China Normal University, Shanghai 200062, China; 2. The Department of Applied Physics, Donghua University, Shanghai 200051, China |
| |
| Abstract: | Transfer matrix method has been used to analyze Curie-temperature (TC) modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Schrdinger equation is employed to calculate the quantum-confined subband energies and the distribution of their corresponding envelope fuctions. Based on these，we investigate the dependence of TC on the built-in electric fields in different structures of quantum well. By changing the asymmetry of double quantum wells (DQW)，TC can be raised up to 3 times. |
| |
| Keywords: | GaN |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
