| 金属-绝缘体-金属隧道发光结的电子隧穿和负阻现象 |
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| 引用本文： | 俞建华,孙承休,王茂祥,张佑文,魏同立.金属-绝缘体-金属隧道发光结的电子隧穿和负阻现象[J].物理学报,1998,47(2):300-306. |
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| 作者姓名： | 俞建华 孙承休 王茂祥 张佑文 魏同立 |
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| 作者单位： | (1)东南大学电子工程系，南京 210096; (2)东南大学物理系，南京 210096 |
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| 基金项目： | 国家自然科学基金资助的课题. |
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| 摘 要： | 薄膜Au-Al2O3-Al隧道结(MIMTJ)在产生可见光发射的同时表现出了明显的负阻现象.这种负阻现象的物理机制是由于结中产生了作为发光中介作用的表面等离极化激元(SPP)对隧穿电子的阻挡作用.通过MIMTJ的电子输运的电路模拟和I-V特性的数值计算，揭示了SPP在I-V特性曲线中的负阻、隧道结发光中所起的关键作用.
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| 关 键 词： | 薄膜 MIMTJ 电子隧穿 隧道结 发光结 |
| 收稿时间： | 6/2/1997 12:00:00 AM |
ELECTRON TUNNELING AND NEGATIVE DIFFERENTIAL RESISTANCE OF MIM LIGHT-EMISSION TUNNEL JUNCTION |
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| YU JIAN-HUA,SUN CHENG-XIU,WANG MAO-XIANG,ZHANG YOU-WEN and WEI TONG-LI.ELECTRON TUNNELING AND NEGATIVE DIFFERENTIAL RESISTANCE OF MIM LIGHT-EMISSION TUNNEL JUNCTION[J].Acta Physica Sinica,1998,47(2):300-306. |
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| Authors: | YU JIAN-HUA SUN CHENG-XIU WANG MAO-XIANG ZHANG YOU-WEN and WEI TONG-LI |
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| Abstract: | We have observed that the apparent negative differential resistance(NDR) comes out in I-V characteristic curves of metal-insulator-metal(MIM) thin film tunnel junction when light-emission from this structure occurs in the experiments.The mechanism of this NDR is that the surface plasmon polariton(SPP),which plays a role of intermediate in the process of light-emission,creates the impeding effect upon tunneling electrons.We have also built the circuit simulation of electron-transfer, computed the numerical solution of I-V characteristic curve,and revealed the key action of SPP on the NDR in I-V characteristic curve and the light-emission from MIM tunnel junction. |
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