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自组织生长InAs/GaAs量子点发光动力学研究
引用本文:吕振东,李晴,许继宗,郑宝真,徐仲英,葛惟锟.自组织生长InAs/GaAs量子点发光动力学研究[J].物理学报,1999,48(4):744-750.
作者姓名:吕振东  李晴  许继宗  郑宝真  徐仲英  葛惟锟
作者单位:(1)半导体超晶格国家重点实验室,中国科学院半导体研究所,北京 100083; (2)香港科技大学物理系,九龙 香港
基金项目:国家自然科学基金(批准号:19574047)和国家攀登计划基础研究(批准号:970211003)资助的课题.
摘    要:介绍了最新发展的粒子数混合超快光谱测量技术,以及采用该技术对自组织生长InAs/GaAs量子点发光动力学的研究结果.实验发现,自组织InAs/GaAs量子点结构的发光寿命大约为1ns,与InAs层厚度关系不大;激子寿命与温度有一定的关系,但没有明显的实验证据表明与量子点的δ态密度有关;用粒子数混合技术,实验上可直接观察到量子点中载流子在激发态能级的态填充过程. 关键词

关 键 词:自组织生长  砷化铟  量子点  砷化镓  发光动力学
收稿时间:1998-09-16

EXCITON DYNAMICS IN SELF-ORGANIZED InAs/GaAs QUANTUM DOTS
LV ZHEN-DONG,LI QING,XU JI-ZONG,ZHENG BAO-ZHEN,XU ZHONG-YING and GE WEI-KUN.EXCITON DYNAMICS IN SELF-ORGANIZED InAs/GaAs QUANTUM DOTS[J].Acta Physica Sinica,1999,48(4):744-750.
Authors:LV ZHEN-DONG  LI QING  XU JI-ZONG  ZHENG BAO-ZHEN  XU ZHONG-YING and GE WEI-KUN
Abstract:Using a newly-developed population mixing technique we have studied the exciton dynamics in self-organized InAs/GaAs quantum dots (QDs).It is found that the exciton lifetime in self-organized InAs/GaAs QDs is around 1ns, almost independent of InAs layer thickness.The temperature dependence of the exciton lifetime varies from sample to sample,but no obvious experimental evidence was found that the lifetime is related to the δ-function of density of states in QDs.We have also found that the population mixing technique can be used to directly reveal the band-filling effect in the excited states of the QDs.
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