| 高压PECVD技术沉积硅基薄膜过程中硅烷状态的研究 |
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| 引用本文： | 侯国付,薛俊明,孙建,郭群超,张德坤,任慧志,赵颖,耿新华,李乙钢.高压PECVD技术沉积硅基薄膜过程中硅烷状态的研究[J].物理学报,2007,56(2):1177-1181. |
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| 作者姓名： | 侯国付 薛俊明 孙建 郭群超 张德坤 任慧志 赵颖 耿新华 李乙钢 |
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| 作者单位： | (1)南开大学光电子所，天津 300071；天津市光电子薄膜器件与技术重点实验室，天津 300071；光电信息科学与技术教育部重点实验室(南开大学，天津大学)，天津 300071; (2)南开大学物理学院，天津 300071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);南开大学校科研和教改项目;国家教育部光电信息技术科学重点实验室资助课题 |
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| 摘 要： | 采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法在不同功率下制备了一系列硅薄膜材料，研究了材料晶化率和生长速度随功率变化的规律， 进而研究PECVD方法沉积硅薄膜过程中的硅烷反应状态，并提出可以根据硅烷耗尽程度的不同将硅烷反应状态分为未耗尽、耗尽和过耗尽三种.然后，对不同硅烷反应状态下的材料结构、光电性能以及相应的电池进行了研究，并指出适合于太阳电池本征层的高质量微晶硅材料应该沉积在硅烷耗尽状态.
关键词：
耗尽状态
微晶硅
光发射谱
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| 关 键 词： | 耗尽状态 微晶硅 光发射谱 |
| 文章编号： | 1000-3290/2007/56(02)/1177-05 |
| 收稿时间： | 2006-01-23 |
| 修稿时间： | 7/5/2006 12:00:00 AM |
Research on silane depletion status during the deposition of silicon thin films by high-pressure PECVD |
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| Hou Guo-Fu,Xue Jun-Ming,Sun Jian,Guo Qun-Chao,Zhang De-Kun,Ren Hui-Zhi,Zhao Ying,Geng Xin-Hua,Li Yi-Gang.Research on silane depletion status during the deposition of silicon thin films by high-pressure PECVD[J].Acta Physica Sinica,2007,56(2):1177-1181. |
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| Authors: | Hou Guo-Fu Xue Jun-Ming Sun Jian Guo Qun-Chao Zhang De-Kun Ren Hui-Zhi Zhao Ying Geng Xin-Hua Li Yi-Gang |
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| Institution: | Instite of Phowelectronics , Nankai Unitersity , Tianjin 300071, China;Tianfin Key Laboratory of Photoelearonic Thin Film Devoces and Techrique 300071, China; Key Laboratory of Optaelectronic Information Science and Technology, Chinese Ministry of Education , Tianjin 300071, China;Institute of Physics , Nankai Unizersity , Tiaras 300071, China |
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| Abstract: | In this paper a series of hydrogenated silicon thin films were prepared by high-pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) using various plasma powers. The influence of plasma power on Raman crystallinity and deposition rate was investigated to study the silane depletion level during the deposition of silicon thin films. Based on these results the status of silane depletion were classified as un-depleted, depleted and over-depleted status. Additionally, the structural and opto-electrical properties were also investigated for those materials deposited under different silane depletion status. The results demonstrated that the μc-Si:H films, which are deposited at depleted status, have good opto-electrical properties and are suitable for application as intrinsic layers in solar cells. |
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| Keywords: | depletion status microcrystalline silicon optical emission spectroscopy |
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