Co与Cu掺杂ZnO薄膜的制备与光致发光研究

采用溶胶-凝胶旋涂法在玻璃衬底上制备了Co, Cu单掺杂及Co，Cu共掺杂ZnO薄膜.用金相显微镜观察了Co与Cu掺杂对ZnO薄膜形貌的影响.X射线衍射（XRD）研究揭示所有ZnO薄膜样品都存在（002）择优取向，在Cu单掺的ZnO薄膜中晶粒尺寸最大.对所有样品的室温光致发光测量都观察到较强的蓝光双峰发射和较弱的绿光发射，其中长波长的蓝光峰和绿光峰都能够通过掺杂进行控制.对不同掺杂源的ZnO薄膜发光性能进行了分析，认为蓝光峰来源于电子由导带底到锌空位能级的跃迁及锌填隙到价带顶的跃迁，绿光峰是由于掺杂造成的 关键词： ZnO薄膜 溶胶-凝胶 Co Cu掺杂 光致发光

Synthesis and photoluminescence of (Co, Cu)-doped ZnO thin films

Co, Cu single doped and co-doped ZnO thin films were fabricated on the glass substrate by means of sol-gel process. The influence of Co and Cu doping on the surface morphologies of ZnO films was investigated. X-ray diffraction shows that all the ZnO thin film samples are well oriented and the grain size of Cu-doped ZnO film is the largest. Strong blue double emission and weak green emission were observed in the photoluminescence spectra of all samples at room temperature and both long wavelength blue peak and green peak could be modulated by doping. The blue double peaks are caused by transition of electrons from the bottom of the conduction band to zinc vacancy or from the zinc interstitial to the top of the valence band. However, the green peak is highly relevant to the oxygen slip formed by doping.