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C3N4/TiN交替复合膜的微结构研究
引用本文:吴大维,付德君,毛先唯,叶明生,彭友贵,范湘军.C3N4/TiN交替复合膜的微结构研究[J].物理学报,1999,48(5):904-912.
作者姓名:吴大维  付德君  毛先唯  叶明生  彭友贵  范湘军
作者单位:武汉大学理学院技术物理系,武汉 430072
基金项目:国家自然科学基金(批准号:95571047)资助的课题.
摘    要:采用双阴极封闭型非平衡磁场dc反应磁控溅射离子镀制备C3N4/TiN复合交替膜,用X射线光电子能谱法分析了薄膜的组成,测量了薄膜的X射线衍射谱和氮化碳的透射电子衍射图像.氮化碳经氮化钛的强迫晶化作用,生成了β-C3N4和c-C3N4. 关键词

关 键 词:复合膜  微结构  超硬材料  氮化碳  氮化钛
收稿时间:1998-06-22

STUDY OF THE MICROSTRUCTURE OF ALTERNATING C3N4 In CNx/TiN COMPOSITE FILMS PREPARED
WU DA-WEI,FU DE-JUN,MAO XIAN-WEI,YU MING-SHENG,PENG YOU-GUI and FAN XIANG-JUN.STUDY OF THE MICROSTRUCTURE OF ALTERNATING C3N4 In CNx/TiN COMPOSITE FILMS PREPARED[J].Acta Physica Sinica,1999,48(5):904-912.
Authors:WU DA-WEI  FU DE-JUN  MAO XIAN-WEI  YU MING-SHENG  PENG YOU-GUI and FAN XIANG-JUN
Abstract:We prepared alternating CNx/TiN composite films using a dc magnetron sputtering system in which a closed unbalanced magnetic field was adopted and a negatively biased grating was placed in front of each substrate. The composition of the thin film was analyzed by X-ray photoelectron spectroscopy (XPS). X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the CNx films deposited at grating voltages lower than 400V are amorphous. β-C3N4 and subic-C3N4(c-C3N4) were formed at higher voltages. A high grating voltage is indispensable for synthesis of c-C3N4. The lattice constants of C3N4 evaluated from the experimental data agree well with reported theoretical values.
Keywords:
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