Si基Bi4Ti3O12铁电薄膜的制备与特性研究

采用sol-gel工艺, 在分层快速退火的工艺条件下成功地制备了高质量Si基Bi_{4Ti3O12铁电薄膜. 研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性. 研究表明: Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势; 退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi关键词： sol-gel法 铁电薄膜 4Ti3O12')" href="#">Bi4Ti3O12 C-V特性}

Studies on the preparation and characterization of Bi4Ti3O12 thin films on p-Si substrates

High-quality Bi₄Ti₃O₁₂ ferroelectric thin films on p-Si substrates were prepared by using the sol-gel technique. The growth behavior, ferroelectric properties, C-V characteristic and fatigue characteristic of Bi₄Ti₃O₁₂ were investigated. The results show that the growth of Bi₄Ti₃O₁₂ on bare p-Si substrates is c-axis-oriented with the increase of annealing temperature, and the apparent dependence of the ferroelectric properties of Bi₄Ti₃O₁₂ films on the grain size, growth behavior and carrier concentration stems from the temperature effects. The C-V hysteresis curves with clockwise loops proved that the Ag/Bi₄Ti₃O₁₂/p-Si heterostructure can realize a memory effect due to the ferroelectric polarization of Bi₄Ti₃O₁₂ films and the remnant polarization of the Bi₄Ti₃O₁₂ films reduced by 12% of the initial value after 10⁹ bipolar switching cycles, which indicated that these Bi₄Ti₃O₁₂ films deposited on p-Si substrates would be qualified for ferroelectric memories.