| a-C: Fe/AlOx/Si基异质结的光伏效应 |
| |
| 引用本文： | 吴利华,章晓中,于奕,万蔡华,谭新玉.a-C: Fe/AlOx/Si基异质结的光伏效应[J].物理学报,2011,60(3):37807-037807. |
| |
| 作者姓名： | 吴利华 章晓中 于奕 万蔡华 谭新玉 |
| |
| 作者单位： | 先进材料教育部重点实验室,清华大学材料科学与工程系,北京 100084 |
| |
| 基金项目： | 国家自然科学基金委-广东联合基金重点项目(批准号: U0734001), 国家自然科学基金(批准号: 50772054), 973计划前期研究专项(批准号: 2008CB617601)资助的课题. |
| |
| 摘 要： | 使用脉冲激光沉积(PLD)依次沉积氧化铝和碳膜制备了a-C: Fe/AlOx/Si基异质结,研究了其光伏效应及其在太阳能电池上的应用.该太阳能电池在标准日光照射(AM1.5,100 mW/cm2)下,可获得0.33 V的开路电压和4.5 mA/cm2的电流密度,太阳能电池的转换效率为0.35%.通过C-V测量,证明了氧化铝层的引入降低了界面能级数目,增加了界面势垒高度.界面能级数目降低减少了光生载流子在界面复合的
关键词：
光伏效应
非晶碳膜
异质结
氧化铝
|
| 关 键 词： | 光伏效应 非晶碳膜 异质结 氧化铝 |
| 收稿时间： | 5/4/2010 12:00:00 AM |
Photovoltaic effect of a-C: Fe/AlOx/Si based heterostructures |
| |
| Wu Li-Hua,Zhang Xiao-Zhong,Yu Yi,Wan Cai-Hua,Tan Xin-Yu.Photovoltaic effect of a-C: Fe/AlOx/Si based heterostructures[J].Acta Physica Sinica,2011,60(3):37807-037807. |
| |
| Authors: | Wu Li-Hua Zhang Xiao-Zhong Yu Yi Wan Cai-Hua Tan Xin-Yu |
| |
| Institution: | Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China |
| |
| Abstract: | The photovoltaic effect of a-C: Fe/AlOx/Si based heterostructures prepared by Pulsed Laser Deposition (PLD) and its applications for solar cells were investigated. Thin alumina layer with a thickness of ~2nm was introduced to the interface between carbon and silicon, and the photovoltatic properties, such as open circuit voltage of ~0.33 V and short current density of ~4.5 mA/cm2, were improved dramatically compared with the samples without the insulation alumina layer. This may be related to the improvement of interface quality, where there are lower recombination centers such as defects and traps, which are approved by the C-V measurement. This work may shed light on the carbon/silicon based solar cells. |
| |
| Keywords: | photovoltaic effect amorphous carbon heterostructures alumina |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
