| GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长 |
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| 引用本文： | 蒋中伟,王文新,高汉超,李辉,He Tao,Chen Hong,Zhou Jun-Ming.GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长[J].物理学报,2009,58(1):471-476. |
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| 作者姓名： | 蒋中伟 王文新 高汉超 李辉 He Tao Chen Hong Zhou Jun-Ming |
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| 作者单位： | 北京凝聚态物理国家实验室，中国科学院物理研究所，北京 100190 |
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| 摘 要： | 研究了GaSb/GaAs复合应力缓冲层上自组装生长的InAs量子点.在2ML GaSb/1ML GaAs复合应力缓冲层上获得了高密度的、沿［100］方向择优分布量子点.随着复合应力缓冲层中GaAs层厚度的不同，量子点的密度可以在1.2×1010cm-2和8×1010cm-2进行调控.适当增加GaAs层的厚度至5ML，量子点的发光波长红移了约25nm，室温下PL光谱波长接近1300nm.
关键词：
自组装量子点
分子束外延
Ⅲ-Ⅴ族化合物半导体
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| 关 键 词： | 自组装量子点 分子束外延 Ⅲ-Ⅴ族化合物半导体 |
| 收稿时间： | 2008-05-21 |
| 修稿时间： | 7/5/2008 12:00:00 AM |
Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots |
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| Jiang Zhong-Wei,Wang Wen-Xin,Gao Han-Chao,Li Hui,He Tao,Yang Cheng-Liang,Chen Hong,Zhou Jun-Ming.Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots[J].Acta Physica Sinica,2009,58(1):471-476. |
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| Authors: | Jiang Zhong-Wei Wang Wen-Xin Gao Han-Chao Li Hui He Tao Yang Cheng-Liang Chen Hong Zhou Jun-Ming |
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| Abstract: | Optical properties and surface structures of InAs/GaAs serf-assembled QDs grown on 2ML GaSb and x-ML GaAs combined strain-buffer layer are investigated systematically by photoluminescence (PL) and atomic force microscopy (AFM). The QD density varies from 1.2×10cm-2 to 8.0×10cm-2 due to the influence of the lattice mismatch. The combined layer favors the increasing of In incorporated into dots and the average height-to-width ratio，which resulted in the red-shift of the emission peaks.For the sample of 5ML GaAs thin film the ground state transition is shifted to nearly 1300nm at room temperature. |
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| Keywords: | self-assembled quantum dots molecular beam epitaxy semiconductor Ⅲ-Ⅴ material |
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