具有高阻抗本征SnO2过渡层的CdS/CdTe多晶薄膜太阳电池

采用超声喷雾热解法制备了具有高阻抗的本征SnO₂透明导电膜，将其运用在CdS层减薄了的CdS/CdTe多晶薄膜太阳电池中，对减薄后的CdS薄膜进行了XRD,AFM图谱分析，并对电池进行了光、暗I-V，光谱响应和C-V测试.结果表明，在高阻膜上沉积的减薄CdS薄膜(111)取向更明显，但易形成微孔.引入高阻层后，能消除CdS微孔形成的微小漏电通道，有效保护p-n结，改善了电池的并联电阻、填充因子和短波响应，使载流子浓度增加，暗饱和电流密度减小，从而电池性能得到改善，电池转换效率增加了14.4%. 关键词： CdTe电池 过渡层 效率

Polycrystalline CdS/CdTe thin-film solar cells with intrinsic SnO2 films of high resistance

Intrinsic SnO₂ films as the high resistance transparent (HRT) layers are prepared by ultrasonic spray pyrolysis and used in CdS/CdTe solar cells with a thin CdS layer. XRD and AFM are used to study the performance of the thin CdS layers. The illuminated and dark I-V characteristics, spectral response (SR) and C-V characteristics of the devices are measured. The results show that the thin CdS films deposited on HRT layers have an obvious preferred orientation along (111) plan. But pinholes are formed when using a thin CdS layer. After introducing the HRT layer, the tunneling leakage caused by the pinholes can be avoided, which effectively protects the p-n junction. Meanwhile, higher shunt resistivity, fill factor, short-wave response, carrier concentration and lower dark saturation current density have been achieved. As a result, the conversion efficiency is enhanced by 14.4%.