强流脉冲电子束辐照诱发金属纯镍中的空位簇缺陷

利用强流脉冲电子束(high-current pulsed electron beam,HCPEB)技术对多晶纯Ni进行了辐照处理,采用透射电子显微镜详细分析了辐照诱发的缺陷结构.HCPEB辐照后,纯镍表层积聚了幅值极大的残余应力,沿{111}晶面形成了稠密的位错墙及孪晶结构,另外还形成了大量的包括位错圈、堆垛层错四面体(SFT)及孔洞在内的空位簇缺陷.SFT缺陷的数量远高于其他空位簇缺陷,其周围区域位错密度很低.孔洞缺陷主要出现在SFT密集区域.HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变 关键词： 强流脉冲电子束 多晶纯Ni 空位簇缺陷 堆垛层错四面体

The vacancy defect clusters in polycrystalline pure nickle induced by high-current pulsed electron beam

High-current pulsed electron beam (HCPEB) technique is employed to irradiate the samples of polycrystalline pure nickel. The microstructures of the irradiated surface layers are investigated by using transmission electron microscopy (TEM). After HCPEB irradiation, very high value of residual stress is induced in the irradiated surface layer, which leads to the formation of dense dislocation walls and twins. Furthermore, a larger number of vacancy defect clusters including dislocation loops, stacking fault tetrahedra (SFT) and voids are also formed. Among three vacancy defect clusters, the number of SFT is much more than that of two other vacancy defect clusters. The lower dislocation density near the regions with dense SFT is observed and voids are likely to be present in these regions. It suggests that the stress with very high value and strain rate induced by rapid heating and cooling due to HCPEB irradiation could cause the shifting of the whole atomic plane synchronously.