氢、氧终端掺硼金刚石薄膜的电子结构

利用氢微波等离子体溅射和浓酸中沸煮方法分别制备了氢、氧终端掺硼金刚石薄膜.借助X射线光电子能谱及接触角检测对两种终端薄膜表面进行了分析，通过扫描探针显微镜研究了针尖和样品间的扫描隧道谱.结果表明，氢终端掺硼金刚石表面能带向上弯曲，在高于价带顶位置存在浅受主能级；氧终端表面能带向下弯曲，带隙较宽，带隙中不存在表面态.对两种终端金刚石薄膜的导电机理进行了讨论. 关键词： 氢终端 氧终端 掺硼金刚石薄膜 电子结构

Electronic structures of hydrogenated and oxygenated boron-doped diamond films

The hydrogenated and oxygenated boron-doped diamond films have been prepared by hydrogen-plasma treatment and boiling in the strong acids, respectively. By means of the X-ray photoelectron spectroscopy and contact angle measurements, the two surface-terminated diamond films have been evaluated. The scanning tunneling spectra have been measured by scanning probe microscope. The results indicated that for the hydrogenated diamond surface, the surface energy bands bend downwards and there exists a shallow acceptor above the valence band maximum. However, the surface energy bands for the oxygenated film bends upwards and its band gap is wide and clean. The conduction mechanisms for the two surface-terminated diamond films have been discussed.