FeMn掺杂AlN薄膜的制备及其特性研究

采用直流磁控共溅射技术, 以Ar与N₂为源气体, 硅片为衬底成功地制备了Fe, Mn掺杂AlN薄膜. 利用X射线衍射和拉曼光谱研究了工作电流、靶基距离等工艺参数的改变对薄膜结构的影响. 利用扫描电子显微镜和能谱分析仪对薄膜的表面形貌和组成成分进行了分析. 利用振动样品磁强计在室温下对Fe, Mn掺杂AlN薄膜进行了磁性表征. Mn掺杂AlN薄膜表现出顺磁性的原因可能是由于Mn掺杂浓度较高, 在沉积过程部分Mn以团簇的形式存在, 反铁磁性的Mn团簇减弱了体系的铁磁交换作用. Fe掺杂AlN薄膜表现出室温铁磁性, 这可能是AlFeN三元化合物作用的结果. 随着Fe 掺杂AlN薄膜中Fe原子浓度从6.81%增加到16.17%, 其饱和磁化强度M_s由0.27 emu·cm^-3逐渐下降到0.20 emu·cm^-3, 而矫顽力H_c则由57 Oe增大到115 Oe (1 Oe=79.5775 A/m), 这一现象与Fe离子间距离的缩短及反铁磁耦合作用增强有关. 关键词： 直流磁控共溅射 氮化铝薄膜 结构 磁性

Study on preparation and characteristics of Fe- and Mn-doped AlN thin films

Fe- and Mn-doped AlN thin films were prepared on Si substrates by direct current (DC) magnetron co-sputtering method in the atmospher of Ar and N₂ mixture. The influences of sputtering currents and the target to substrate distance on the structure of the films were investigated by X-ray diffraction and Raman spectroscopy, respectively. Surface morphology and composition were studied by scanning electron microscope (SEM) with an energy dispersive X-ray spectroscopy (EDS) attachment. The magnetism of Mn- and Fe-doped AlN films was measured by vibrating sample magnetometer (VSM) at room temperature (RT). Processing of the Mn-doped AlN films produces Mn clusters in the samples. Due to the presence of the antiferromagnetism Mn clusters, ferromagnetism is either suppressed or disappears. The Fe-doped AlN films show ferromagnetism at RT, which should arise from the AlFeN ternary alloy. With the increase of the Fe target sputtering current, the Fe concentration is increased from 6.81 at.% to 16.17at.%; the saturation magnetization M_s is reduced from 0.27 emu·cm^-3 to 0.20 emu·cm^-3, and the coercive force H_c is increased from 57 Oe to 115 Oe, this is because the separation of Fe ions get shorter and the antiferromagnetic coupling is enhanced.
Keywords： dc magnetron co-sputtering AlN thin films structure magnetism