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扭转形变对石墨烯吸附O原子电学和光学性质影响的电子理论研究
引用本文:范达志,刘贵立,卫琳.扭转形变对石墨烯吸附O原子电学和光学性质影响的电子理论研究[J].物理学报,2017,66(24):246301-246301.
作者姓名:范达志  刘贵立  卫琳
作者单位:沈阳工业大学建筑工程学院, 沈阳 110870
基金项目:国家自然科学基金(批准号:51371049)资助的课题.
摘    要:基于密度泛函理论的第一性原理方法研究了扭转形变对石墨烯吸附O体系结构稳定性、电子结构和光学性质,包括吸附能、带隙、吸收系数及反射率的影响.研究发现,吸附O原子后,距O原子最近的C原子被拔起,导致石墨烯平面发生扭曲.吸附能计算表明,扭转形变使石墨烯吸附O原子体系结构稳定性下降,而扭转程度对结构稳定性影响微弱.能带结构分析发现,O原子的吸附使石墨烯由金属变成半导体,扭转形变发生时,可实现其从半导体到金属、再到半导体特性的转变.扭转角为12°的吸附O原子体系为间接带隙,而其他出现带隙的体系均为直接带隙.与本征石墨烯受扭体系相比,吸附O原子体系的电子结构对扭转形变的敏感度降低,其中扭转角在10°—16°范围内变化时,带隙始终稳定在0.11 eV附近,即在此扭转角范围内始终对应窄带隙半导体.在光学性能中,受扭转形变的吸附体系吸收系数和反射率峰值较未受扭转形变石墨烯吸附O原子体系均减弱,且随着扭转程度的加剧,均出现红移到蓝移的转变.

关 键 词:石墨烯吸附O原子  扭转形变  能带结构  光学性质
收稿时间:2017-07-03

Electron-theoretical study on the influences of torsional deformation on electrical and optical properties of O atom absorbed graphene
Fan Da-Zhi,Liu Gui-Li,Wei Lin.Electron-theoretical study on the influences of torsional deformation on electrical and optical properties of O atom absorbed graphene[J].Acta Physica Sinica,2017,66(24):246301-246301.
Authors:Fan Da-Zhi  Liu Gui-Li  Wei Lin
Institution:College of Constructional Engineering, Shenyang University of Technology, Shenyang 110870, China
Abstract:The effects of torsional deformation on the structural stability, the electronic structures and the optical properties, including adsorption energy, band gap, absorption coefficient and reflectivity of O atom adsorbed graphene are studied by using the first-principles calculations. Our results indicate that the C atom closest to O atom is pulled up, causing the graphene plane to be distorted after the O atom has been adsorbed. The adsorption energy calculations show that due to the adsorption of O atom, the structural stability of graphene system decreases, but the degree of torsion has a weak effect on the structural stability. The analysis of band structure shows that the adsorption of O atom causes the graphene to convert into a semiconductor from a metal. Torsional deformation makes it change from a semiconductor to a metal, and to a semiconductor. The O atom adsorption system with a torsion angle of 12° has an indirect band gap but the band gaps of other systems are all direct bandgaps. Compared with the intrinsic graphene torsion system, the adsorbed O atom system has an electronic structure that is less sensitive to torsional deformation. When the torsion angle changes from 10° to 16°, the bandgap is always stable at around 0.11 eV. And the adsorption system always corresponds to a narrow bandgap semiconductor in this torsion angle range. For optical properties, comparing with the O atoms adsorbed on graphene with the 0° torsion angle, the peaks of the absorption coefficient and the reflectivity of the system are reduced, and have a transform of red shift into blue shift in a torsion angle ranging from 2° to 20°.
Keywords:O atom adsorbed on graphene  torsional deformation  band structure  optical properties
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