热迁移对Cu/Sn/Cu焊点液-固界面Cu6Sn5生长动力学的影响

电子封装技术中, 微互连焊点在一定温度梯度下将发生金属原子的热迁移现象, 显著影响界面金属间化合物的生长和基体金属的溶解行为. 采用Cu/Sn/Cu焊点在250℃和280℃下进行等温时效和热台回流, 对比研究了热迁移对液-固界面Cu₆Sn₅生长动力学的影响. 等温时效条件下, 界面Cu₆Sn₅生长服从抛物线规律, 由体扩散控制. 温度梯度作用下, 焊点冷、热端界面Cu₆Sn₅表现出非对称性生长, 冷端界面Cu₆Sn₅生长受到促进并服从直线规律, 由反应控制, 而热端界面Cu₆Sn₅生长受到抑制并服从抛物线规律, 由晶界扩散控制. 热端Cu 基体溶解到液态Sn中的Cu原子在温度梯度作用下不断向冷端热迁移, 为冷端界面Cu₆Sn₅的快速生长提供Cu 原子通量. 计算获得250℃和280℃下Cu原子在液态Sn中的摩尔传递热Q^*分别为14.11和14.44 kJ/mol, 热迁移驱动力F_L分别为1.62×10^-19和1.70×10^-19 N.

Effect of thermomigration on the growth kinetics of Cu6Sn5 at liquid-solid interfaces in Cu/Sn/Cu solder joints

With the continuous miniaturization of electronic packaging, micro bumps for chip interconnects are smaller in size, and thus the reliability of interconnects becomes more and more sensitive to the formation and growth of intermetallic compounds (IMCs) at liquid-solid interface during soldering. Thermomigration (TM) is one of the simultaneous heat and mass transfer phenomena, and occurs in a mixture under certain external temperature gradient. In the process of interconnection, micro bumps usually undergo multiple reflows during which nonuniform temperature distribution may occur, resulting in TM of metal atoms. Since the interdiffusion of atoms between solders and under bump metallization (UBM) dominates the formation of interfacial IMCs, TM which enhances the directional diffusion of metal atoms and induces the redistribution of elements, will markedly influence the growth behaviors of interfacial IMCs and consequently the reliability of solder joints. The diffusivity of atoms in liquid solder is significantly larger than that in solid solder and in consequence a small temperature gradient may induce the mass migration of atoms. As a result, the growth of interfacial IMCs becomes more sensitive to temperature difference between solder joints in soldering process. So far, however, few studies have focused on liquid state TM in solder joints, and the growth kinetics of interfacial IMCs under TM during soldering is still unknown to us. In this study, Cu/Sn/Cu solder joints are used to investigate the migration behavior of Cu atoms and its effect on the growth kinetics of interfacial Cu₆Sn₅ under temperature gradients of 35.33℃/cm at 250℃ and 40.0℃/cm at 280℃, respectively. TM experiments are carried out by reflowing the Cu/Sn/Cu interconnects on a hot plate at 250℃ and 280℃ for different durations. For comparison, isothermal aging experiments are conducted in a high temperature chamber under the same temperatures and reaction durations. During isothermal aging, the growth of interfacial Cu₆Sn₅ follows a parabolic law and is controlled by bulk diffusion. Under the temperature gradient, asymmetrical growth of interfacial Cu₆Sn₅ is observed between cold and hot ends. At the cold end, the growth of the interfacial Cu₆Sn₅ is significantly enhanced and follows a linear law, indicating a reaction-controlled growth mechanism; while at the hot end, the growth of the interfacial Cu₆Sn₅ is inhibited and follows a parabolic law, indicating a diffusion-controlled growth mechanism. The dissolved Cu atoms from the Cu substrate at the hot end are driven to migration toward the cold end by temperature gradient, providing the Cu atomic flux for the fast growth of the interfacial Cu₆Sn₅ at the cold end. With the variation of the measured thickness of Cu₆Sn₅ IMC at the cold end and the simulated temperature gradients, the molar heat of transport Q^* of Cu atoms in molten Sn is calculated to +14.11 kJ/mol at 250℃ and +14.44 kJ/mol at 280℃. Accordingly, the driving forces of thermomigration in molten solder F_L are estimated to be 1.62×10^-19 N and 1.70×10^-19 N, respectively.