首页 | 本学科首页   官方微博 | 高级检索  
     检索      

激光烧蚀Al热原子与CF4反应中C2的形成及其发光光谱研究
引用本文:张树东,李海洋.激光烧蚀Al热原子与CF4反应中C2的形成及其发光光谱研究[J].物理学报,2003,52(5):1297-1301.
作者姓名:张树东  李海洋
作者单位:(1)中国科学院安徽光学精密机械研究所环境光谱学实验室,合肥 230031;中国科学院研究生院,北京 100039; (2)中国科学院安徽光学精密机械研究所环境光谱学实验室,合肥 230031;中国科学院研究生院,北京 100039;西北师范大学物理与电子工程学院,兰州 730070
基金项目:国家自然科学基金(批准号20073042)资助的课题
摘    要:脉冲激光烧蚀金属平面铝靶产生的热原子与气相CF4碰撞反应中,在400—600nm之间观测到激发态C2分子的发光光谱,它们可归属为Swan带的d3Πg-a3Πu跃迁中Δv=2,1,0,-1,-2五个振动序列(v'≤6).光谱强度分析表明,C2激发态的振动温度达6340K左右.与激光烧蚀Al+O2反应生成AlO的实验结果以及激光烧蚀Cu+CF4的光谱比较,对比Al(2P1/2-2S1/2,3944nm)和C2的d—a跃迁(0—0)带带头(5165nm)的飞行时间轮廓,认为激发态的Al(2S1/2)原子通过 关键词: 激光烧蚀 发光光谱 C2分子

关 键 词:激光烧蚀  发光光谱  C2分子
文章编号:1000-3290/2003/52(05)1297-05
收稿时间:8/7/2002 12:00:00 AM
修稿时间:2002年8月7日

Formation and emission spectra of C2 swan band during the reaction of laser ablating target of aluminum with CF4 beam
Zhang Shu-Dong and Li Hai-Yang.Formation and emission spectra of C2 swan band during the reaction of laser ablating target of aluminum with CF4 beam[J].Acta Physica Sinica,2003,52(5):1297-1301.
Authors:Zhang Shu-Dong and Li Hai-Yang
Abstract:The emission spectra of C2 Swan band transition has been observed in the 430nm-600nm region by Q switch laser ablating target of Al and reacting with CF4 beam.Five vibrational band sequences (Δv=2,1,0,-1 and -2) of d3Πg a3Πu are identified and the largest vibrational number of the excited state d is 6.Using a local thermal equilibrium model, the vibrational temperature of d state is about 6340K. Emission spectra from AlF have not been found. Comparing with the results of laser ablated Al+O2 system and similar experiment of Cu+CF4 system, while the time of flight profile of Al(2P1/2-2S1/2,3944nm)and(0,0)band head of C2 are analyzed, we consider that the primary reason of the producing of excited state d3Πg is the electronic energy transformation between excited states Al(2S1/2) and C2.
Keywords:laser ablation  emission spectrum  C2 molecule
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号