| Si中S0对、Se0对和Te0对的电子结构 |
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| 引用本文： | 胡伟敏,顾一鸣,任尚元.Si中S0对、Se0对和Te0对的电子结构[J].物理学报,1986,35(12):1582-1591. |
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| 作者姓名： | 胡伟敏 顾一鸣 任尚元 |
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| 作者单位： | 中国科学技术大学物理系 |
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| 摘 要： | 利用紧束缚近似下的格林函数方法,讨论了Si中(S0)2,(Se0)2及(Te0)2基态的能级和波函数。分析了几种不同的观点。(S0)2,(Se0)2及(Te0)2均在禁带中引入一个对称性的A1g能级和一个反对称性的A2u能级,二者都是填满的。现有实验观测到的是较高的A1g能级。从理论上指出了对称性的A1g能级反而高于反对称性的能级的原因。而Si中(Se2)+的g因子测量值和(S2)+,(Se2)+的ESR实验结果也支持本文的观点。
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| 收稿时间： | 1986-03-10 |
ELECTRONIC STRUCTURES OF CHALCOGENIDE PAIRS IN Si |
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| HU WEI-MIN,GU YI-MING and REN SHANG-YUAN.ELECTRONIC STRUCTURES OF CHALCOGENIDE PAIRS IN Si[J].Acta Physica Sinica,1986,35(12):1582-1591. |
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| Authors: | HU WEI-MIN GU YI-MING and REN SHANG-YUAN |
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| Abstract: | The electronic structures of the ground states of S0 Se0 and Te0 pairs in Si are invesgated using the Green's function method with a tight binding Hamiltonian. Three different opinions are discussed. (S0)2, (Se0)2 or (Te0)2 in Si will introduce a symmetrical A1g state and an anti-symmetrical A2u state in the gap, both are fully occupied, the observed state is the shallower A1g state. The theoretical reason why the symmetrical A1g, state is higher than the antisymmetrical A2u state is analysed. The measured g factor of (Se2)+ in Si and the experimental data of ESR spectra for (S2)+ and (Se2)+ in Si also support the conclusions of the present paper. |
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