| 掺铒硅基材料发光的新途径 |
| |
| 引用本文： | 肖志松,张通和,徐飞,程国安,顾岚岚.掺铒硅基材料发光的新途径[J].物理学报,2001,50(1):164-168. |
| |
| 作者姓名： | 肖志松 张通和 徐飞 程国安 顾岚岚 |
| |
| 作者单位： | (1)北京师范大学射线束技术与材料改性教育部实验室,北京师范大学低能核物理研究所,北京市辐射中心,北京100875; (2)复旦大学应用表面物理国家重点实验室,上海200422; (3)南昌大学材料科学与工程系,南昌330047 |
| |
| 基金项目： | 国家自然科学基金(批准号：59671051)及复旦大学应用表面物理国家重点实验室基 |
| |
| 摘 要： | 关键词：
|
| 关 键 词： | 离子注入 光致发光 铒 纳米硅 掺铒硅基材料 |
| 修稿时间： | 2000年7月7日 |
A NOVEL APPROACH OF
PHOTOLUMINESCENCE FROM ERBIUM-DOPED SILICON-BASED MATERIALS |
| |
| XIAO Zhi-Song,ZHANG TONG-HE,XU FEI,CHENG Guo-an,GU LAN-LAN.A NOVEL APPROACH OF
PHOTOLUMINESCENCE FROM ERBIUM-DOPED SILICON-BASED MATERIALS[J].Acta Physica Sinica,2001,50(1):164-168. |
| |
| Authors: | XIAO Zhi-Song ZHANG TONG-HE XU FEI CHENG Guo-an GU LAN-LAN |
| |
| Abstract: | Silicon and erbium were duel-implanted into thermally oxidized SiO2/Si by MEVVA (Metal Vapor Vacuum Arc)ion source implanter.After rapid thermal annealing,the 1.54μm photoluminescence was observed at 77K.RBS results indicated that Er ions were mainly distributed near the surface of the samples,and the highest Er concentration reached 1021cm-3.Nanometer crystalline silicon (nc-Si) was embedded in the implanted layer.X-ray photoelectron spectrum (XPS) showed the concentration variation of Er,Si and O in the implanted layer.Er3+ acted as an isolated ion luminescence center,and most excitation energy originated from the e-h combination at the interface of nc-Si/SiO2 (or c-Si/SiO2),then the energy transfered to Er3+ ions resulted in light emission of 1.54μm. |
| |
| Keywords: | ion implantation photoluminescence erbium nc\|Si |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
