溅射粒子能量对金属Mo薄膜表面特性的影响

利用原子力显微镜研究了不同溅射离子能量对Mo薄膜表面形貌的影响.利用特殊设计的夹具，在同一真空内完成所有薄膜样品的制备，减少了多次沉积过程对薄膜生长特性的影响 .对原子力显微镜测量得到的表面高度数据进行相关运算，从统计角度定量地研究了不同沉积能量下Mo薄膜表面特性.结果表明，薄膜表面具有典型的分形特征，在相关运算的基础上给出表面的分形维数、水平相关长度、界面宽度等参数.其中，屏栅电压为500V时制备 的薄膜样品与300和700?V时制备的薄膜样品表面的界面宽度及水平相关长度具有倍数差别，但三种溅射电压下薄 关键词： 离子束溅射 钼 薄膜 分形

The effect of sputtering particle energy on surface characteristics of Mo thin films

Using the atomic force microscopy, we have studied the effect of sputtering particle energy on the growth and microstructures of Mo thin films prepared on borosilicate glass (BK7) substrates with ion beam sputtering technique. With specially designed fixture, all samples were prepared in the same run, which diminished the effect of multi-runs on the growth of thin films. Furthermore,the morphology of Mo thin films was studied quantitatively based on numerical analy sis. The morphology of Mo thin films is typically fractal, and the surface para meters of thin films such as fractal dimensions, lateral correlation length and interface width are all obtained. Compared with the thin films prepared under the screen grid voltages of 300 and 700V, the interface width and lateral correlation length of the thin films prepared under the screen grid voltage of 500 V show two times large difference. All the fractal dimensions of thin films are n ear 2 and the growth process of Mo thin films can be described using Mullins diffus ion model. Besides, by using the technique of Auger electron spectroscopy, the atomic concentrations can be obtained in the depth profile.