ZnS型薄膜电致发光器件输运过程的解析能带模拟

采用解析能带模型对ZnS型薄膜电致发光器件的输运过程进行了Monte Carlo模拟.利用分段的多项式拟合了ZnS的实际导带结构，计算了能态密度和散射速率.以这些结果为基础，模拟了ZnS中的电子输运过程.通过比较，这一模型既具有非抛物多能谷能带模型运算速度快、使 用方便的优势，又具有与采用全导带模型相近的计算精度.进而，讨论了能带模型对模拟结 果的影响，发现色散关系与能态密度均对模拟结果有较大影响.

ANALYTICAL BAND SIMULATION OF ELECTRIC TRANSPORT IN ZnS THIN FILM ELECTROLUMINES CENT DEVICES

The band structure of ZnS calculated from empirical pseudopotential method is fitted by use of polynomials. The density of state and scattering rates are also calculated from these polynomials. Based on these results, electric transport process in ZnS-type thin film electroluminescent devices is simulated through Monte Carlo method. By comparison with other methods, the calculation based on this m odel is as fast as nonparabolic model and as accurate as full band model. Furthe rmore, the influence of band model on simulation result is also investigated. We show that the dispersion relations and density of state are all important in si mulation.