| InGaAs/GaAs应变量子阱激光器线宽展宽因子的理论研究 |
| |
| 引用本文： | 张帆,李林,马晓辉,李占国,隋庆学,高欣,曲轶,薄报学,刘国军.InGaAs/GaAs应变量子阱激光器线宽展宽因子的理论研究[J].物理学报,2012,61(5):54209-054209. |
| |
| 作者姓名： | 张帆 李林 马晓辉 李占国 隋庆学 高欣 曲轶 薄报学 刘国军 |
| |
| 作者单位： | 1. 长春理工大学高功率半导体激光国家重点实验室,长春,130022
2. 总装备部装甲兵驻长春地区军事代表室,长春,130103 |
| |
| 基金项目： | 国家自然科学基金(批准号: 60976038, 61006039)和高功率半导体激光国家重点实验室基金(批准号: 010602)资助的课题. |
| |
| 摘 要： | 详细地介绍了计算线宽展宽因子(α因子)的理论基础及推导过程, 建立了α因子的简便模型. 该模型分别考虑了带间跃迁、带隙收缩和自由载流子效应对α因子的影响, 利用不同载流子浓度下的增益曲线得到光子能量随载流子浓度的变化速率以及微分增益, 进而对α因子进行近似计算. 模拟计算了InGaAs/GaAs量子阱激光器的增益曲线及α 因子的大小, 计算结果与文献报道的实验值相符. 进一步讨论了InGaAs/GaAs量子阱阱宽及In组分对α 因子的影响. 结果表明, α 因子随In组分和阱宽的增加而增加.
|
| 关 键 词： | InGaAs/GaAs 线宽展宽因子 应变量子阱 增益 |
| 收稿时间： | 2011-04-21 |
Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers |
| |
| Zhang Fan,Li Lin,Ma Xiao-Hui,Li Zhan-Guo,Sui Qing-Xue,Gao Xin,Qu Yi,Bo Bao-Xue and Liu Guo-Jun.Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers[J].Acta Physica Sinica,2012,61(5):54209-054209. |
| |
| Authors: | Zhang Fan Li Lin Ma Xiao-Hui Li Zhan-Guo Sui Qing-Xue Gao Xin Qu Yi Bo Bao-Xue and Liu Guo-Jun |
| |
| Institution: | National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;The Changchun Regional Office of the Armored Forces Representative Bureau, the Equipment Headquarters of the P.L.A., Changchun 130103,
China;National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China |
| |
| Abstract: | A simple model of calculating the linewidth enhancement factor(a factor) is presented by introducing the correlative theory and its conversion formula of theαfactor in detail.The contributions of interband transition,free carrier absorption and band gap narrowing to the a factor are taken into account.Carrier concentration and differential gain dependence of photon energy are obtained from the gain curves for different carrier concentrations.The gain curves and theαfactor of InGaAs/GaAs quantum well are simulated, separately,and the results accord well with those reported in the literature.Subsequently discussed are two important parameters of InGaAs/GaAs quantum well laser containing quantum well width and In mole fraction.The results show that the increase of two parameters leads theαfactor to increase. |
| |
| Keywords: | InGaAs/GaAs linewidth enhancement factor strained quantum well gain |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
