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| 多壁碳纳米管薄膜的压阻效应研究 | |
| 引用本文： | 王永田,刘宗德,易军,薛志勇.多壁碳纳米管薄膜的压阻效应研究[J].物理学报,2012,61(5):57302-057302. |
| 作者姓名： | 王永田 刘宗德 易军 薛志勇 |
| 作者单位： | 1. 华北电力大学电站设备状态监测与控制教育部重点实验室,北京,102206 2. 华北电力大学电站设备状态监测与控制教育部重点实验室,北京102206／华北电力大学苏州研究院,苏州215123 3. 中国科学院物理研究所,北京,100190 |
| 基金项目： | 国家自然科学基金(批准号: 51101056, 51006034)、国家重点基础研究发展计划(批准号: 2011CB710706)、新金属材料国家重点实验室开放基金(批准号: 2010Z-02)和苏州市科技计划项目(批准号: SYG201002)资助的课题. |
| 摘 要： | 对多壁碳纳米管薄膜的压阻效应进行了研究. 实验所用的多壁碳纳米管用热灯丝化学气相沉积法合成, 压阻效应用三点弯曲法测量. 研究发现: 在室温下与500微应变内, 原始的多壁碳纳米管薄膜无明显压阻效应, 而经化学修饰处理的碳纳米管膜的压阻因子最高可达120左右, 大大超过多晶硅(Si)在35°C时的压阻因子30, 并且压阻因子与制备方法密切相关. 重点讨论了多壁碳纳米管薄膜产生压阻效应的机制. |
| 关 键 词： | 压阻效应 碳纳米管 压阻因子 |
| 收稿时间： | 2011-08-11 |
| 修稿时间： | 9/9/2011 12:00:00 AM |
Study on the piezoresistive effect of the multiwalled carbon nanotube films |
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| Wang Yong-Tian,Liu Zong-De,Yi Jun and Xue Zhi-Yong.Study on the piezoresistive effect of the multiwalled carbon nanotube films[J].Acta Physica Sinica,2012,61(5):57302-057302. | |
| Authors: | Wang Yong-Tian Liu Zong-De Yi Jun and Xue Zhi-Yong |
| Institution: | Key Laboratory of Condition Monitoring and Control for Power Plant Equipment of Ministry of Education, North China Electric Power University, Beijing 102206, China;Key Laboratory of Condition Monitoring and Control for Power Plant Equipment of Ministry of Education, North China Electric Power University, Beijing 102206, China; The Suzhou Research Institute of North China Electric Power University, Suzhou 215123, Chi;Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Key Laboratory of Condition Monitoring and Control for Power Plant Equipment of Ministry of Education, North China Electric Power University, Beijing 102206, China |
| Abstract: | In this paper, the piezoresistive effect of the multiwalled carbon nanotube (MWCNT) film is studied. Carbon nanotubes are synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the MWCNT film is studied by a three-point bending test. The gauge factor of the MWCNT film under 500 microstrain is found to be at most 120 at room temperature, exceeding that of polycrystalline silicon (30) at 35 °C. The origin of the piezoresistivity in MWCNT film is also discussed. |
| Keywords: | piezoresistive effect carbon nanotubes gauge factor |
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