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非故意掺杂碳对ZnMnO:N磁性影响的实验与理论研究
引用本文:吴孔平,顾书林,朱顺明,黄友锐,周孟然.非故意掺杂碳对ZnMnO:N磁性影响的实验与理论研究[J].物理学报,2012,61(5):57503-057503.
作者姓名:吴孔平  顾书林  朱顺明  黄友锐  周孟然
作者单位:1. 安徽理工大学电气与信息工程学院,淮南,232001
2. 南京大学电子科学与工程学院,南京,210093
基金项目:国家自然科学基金 (批准号: 60990312, 61025020)和国家高技术研究发展计划 (批准号: 2007AA03Z404)资助的课题.
摘    要:利用金属有机源化学气相沉积技术, 通过改变受主掺杂源和导入氢气并提高生长压力来逐步抑制C的办法, 在蓝宝石上外延了Mn, N共掺ZnO薄膜. X射线衍射显示所有样品都具有良好的单轴取向. ZnMnO:N样品的Raman光谱中C元素相关的振动模明显消失. 同时van der Pauw法Hall效应测量表明, 通过逐步对C的抑制, 样品由n型导电转变成p型导电, 这主要是由于C与N形成复合体取代O位(CN)O, 具有最低形成能且充当浅施主. 对N, Mn共掺ZnO晶体的第一性原理模拟计算显示了N, Mn共掺ZnO的态密度在Fermi能级处存在较强的自旋极化, 表明N 2p电子与Mn 3d电子之间存在较强的p-d相互作用, 形成磁性束缚激子产生磁矩. 一旦引入C后, C, N形成复合体取代O位, 导致体系磁性减弱或者消失. 模拟计算结果与实验表征分析结果一致表明: 对于Mn, N共掺ZnO薄膜样品, 引入C与N形成复合体取代O位, Mn, N共掺ZnO薄膜磁性减弱或消失. 因此, Mn 3d电子与N 2p局域束缚的电子形成的磁性束缚激子决定了Mn, N共掺ZnO薄膜室温铁磁信号的产生.

关 键 词:稀磁半导体  铁磁性  第一性原理  Mn-N共掺ZnO
收稿时间:2011-09-27

Experimental and theoretical studies on the influence of unintentionally doped carbon on magnetic properties in ZnMnO:N
Wu Kong-Ping,Gu Shu-Lin,Zhu Shun-Ming,Huang You-Rui and Zhou Meng-Ran.Experimental and theoretical studies on the influence of unintentionally doped carbon on magnetic properties in ZnMnO:N[J].Acta Physica Sinica,2012,61(5):57503-057503.
Authors:Wu Kong-Ping  Gu Shu-Lin  Zhu Shun-Ming  Huang You-Rui and Zhou Meng-Ran
Institution:School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan 232001, China;School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan 232001, China;School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan 232001, China
Abstract:Mn-N co-doped ZnO film on sapphire substrate is fabricated by metal-organic chemical vapor deposition method with changing the acceptor-doped source and importing the hydrogen and increasing the pressure to suppress carbon (C) approach gradually. X-ray diffraction displays the strong C-axis orientation. Raman sepectrum is employed to analyze vibration modes related to C elements. Hall measurements on the samples by van der Pauw method reveal the transition from n-type to p-type after suppression of C, which is possible due to the complex of (CN)O acting as a shallow donor. The first principles simulation calculation for Mn and N codoped ZnO crystals has been perfermed, and the total density of states reveals the strong p-d interaction and magnetic moment existing in the Mn and N codoped ZnO. The introduction of the complex of (CN)O, causes the p-d interaction to disappear and the magnetic moment to reduce even disappear. Therefore, the formation of magnetic bound polaron of Mn 3d electronics and N 2p local bound electronic determines the magnetic interaction effect, which can be explained from the theoretical predication on the Mn 3d and N 2p ferromagnetic (hole) coupling on the ferromagnetism.
Keywords:dilute magnetic semiconductor  ferromagnetism  first principle  N-Mn codoped ZnO
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