高温退火对非晶CNx薄膜场发射特性的影响

采用射频磁控溅射方法在纯N₂气氛中沉积了非晶CN_x薄膜样品，并 在真空中退火至900 ℃.对高温退火引起的CN_x薄膜化学成分、键合结构及其场发射特性方面的变 化进行研究.用傅里叶变换红外光谱和x射线光电子能谱分析样品的内部成分及键合结构的变化，其中sp²键及薄膜中N的含量与薄膜的场发射特性密切相关.退火实验的结果表明 高温退火可以导致CN_x薄膜中N含量大量损失，并在薄膜中形成大量sp^{2< 关键词： x薄膜')" href="#">CN_x薄膜 化学键合 退火温度 场致电子发射}

The effect of annealing on the field emission properties of amorphous CNx films

The carbon nitride films deposited by r.f. magnetron sputtering in pure N_{2< /sub> discharge were annealed in vacuum up to 900 ℃. The chemical composition and bonding structure of the films were studied using x-ray photoelectron spectroscopy, Fourier Transform Infrared. The effects of thermal annealing on the bonding structure and the electron field emission characteristics of CNx films wer e investigated. It is found that the sp² bonds and N content in CNx films are closely related to the filed emission of CNx films. The results show that thermal annealing treatment causes a great loss of N content and a larger formation of sp² bonds in CNx films, which would influence sign ificantly the field emission properties for the CNx films. The CNx films annealed at 750 ℃ show the optimal electron emission properties. Besides, the correlation between the chemical bonding structures and electron emission properties for the CNx films was also discussed.}