| Si(111)分子束外延生长时RHEED强度振荡的观察 |
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| 引用本文： | 金高龙,陈可明,盛篪,周国良,蒋维栋,张翔九.Si(111)分子束外延生长时RHEED强度振荡的观察[J].物理学报,1989,38(3):394-398. |
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| 作者姓名： | 金高龙 陈可明 盛篪 周国良 蒋维栋 张翔九 |
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| 作者单位： | 复旦大学表面物理实验室 |
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| 摘 要： | 本文报道用反射式高能电子衍射的强度振荡测量来观察Si(111)衬底上分子束外延的生长行为,观察到了双原子层的振荡模式。振荡的衰减和恢复特性不同于Si(100)衬底上的生长行为,而同GaAs分子束外延时的特性非常相似。
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| 关 键 词： | Si 分子束 外延 生长 RHEED 振荡 |
| 收稿时间： | 1988-07-15 |
OBSERVATION OF INTENSITY OSCILLATIONS OF RHEED DURING SILICON MOLECULAR BEAM EPITAXIAL GROWTH |
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| JIN GAO-LONG,CHEN KE-MING,SHENG CHI,ZHOU GUO-LIANG,JIANG WEI-DONG and ZHANG XIANG-JIU.OBSERVATION OF INTENSITY OSCILLATIONS OF RHEED DURING SILICON MOLECULAR BEAM EPITAXIAL GROWTH[J].Acta Physica Sinica,1989,38(3):394-398. |
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| Authors: | JIN GAO-LONG CHEN KE-MING SHENG CHI ZHOU GUO-LIANG JIANG WEI-DONG and ZHANG XIANG-JIU |
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| Abstract: | The growth behavior during silicon molecular beam epitaxy on Si(lll) is observed by measuring the intensity oscillation of reflection high energy electron diffraction. The oscillation behaves as what is expected with bilayer model. The characteristics of damping and recovery of intensity oscillation during Si molecular beam epitaxy growth on Si(lll) are different from those on Si(100), but are very similar to those during GaAs molecular beam epitaxy growth. |
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