| H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响 |
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| 引用本文： | 李林娜,陈新亮,王斐,孙建,张德坤,耿新华,赵颖.H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响[J].物理学报,2011,60(6):67304-067304. |
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| 作者姓名： | 李林娜 陈新亮 王斐 孙建 张德坤 耿新华 赵颖 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所,南开大学光电子薄膜器件与技术天津市重点实验室,南开大学光电信息技术科学教育部重点实验室,天津 300071 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2006CB202602,2006CB202603)、国家高技术研究发展计划(批准号:2009AA050602)、天津市应用基础及前沿技术研究计划(批准号:09JCYBJC06900)和中央高校基本科研业务费专项资金资助的课题. |
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| 摘 要： | 实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al2O3陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10-4 Ω·cm
关键词：
氧化锌
氢气流量
磁控溅射
太阳电池
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| 关 键 词： | 氧化锌 氢气流量 磁控溅射 太阳电池 |
| 收稿时间： | 8/6/2010 12:00:00 AM |
Effects of hydrogen flux on aluminum doped zinc thin films by pulsed magnetron sputtering |
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| Li Lin-Na,Chen Xin-Liang,Wang Fei,Sun Jian,Zhang De-Kun,Geng Xin-Hua,Zhao Ying.Effects of hydrogen flux on aluminum doped zinc thin films by pulsed magnetron sputtering[J].Acta Physica Sinica,2011,60(6):67304-067304. |
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| Authors: | Li Lin-Na Chen Xin-Liang Wang Fei Sun Jian Zhang De-Kun Geng Xin-Hua Zhao Ying |
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| Institution: | Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education;Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education;Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education;Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education;Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education;Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education;Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education |
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| Abstract: | Aluminum doped zinc oxide(AZO) thin films are prepared by pulsed magnetron sputtering in pure argon gas.In order to improve the properties of AZO thin films,we add hydrogen gas into vacuum during sputtering.High purity ceramic ZnO:Al2O3 target and hydrogen gas at various flow rates are used as source materials.The microstructure,the surface information,the optical and electrical properties of AZO/H film are investigated.The crystallization,the Hall mobility and the transmission between 400 nm and 1100 nm ar... |
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| Keywords: | zinc oxide H2 flow rates magnetron sputtering solar cell |
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