首页 | 本学科首页   官方微博 | 高级检索  
     检索      

离子束增强沉积VO2多晶薄膜的温度系数
引用本文:李金华,袁宁一.离子束增强沉积VO2多晶薄膜的温度系数[J].物理学报,2004,53(8):2683-2686.
作者姓名:李金华  袁宁一
作者单位:江苏工业学院信息科学系,常州 213016
基金项目:国家自然科学基金(批准号:10175027,60277019)资助的课题.
摘    要:用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明,薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好,薄膜的电阻温度系数(TCR)最高可达4.23%/K.从成膜机理出发,较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为,单一取向的VO2结构使薄膜晶粒具有较高的电导激活能,致密的薄膜结构减少了氧空位和晶界宽度,使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词: VO2多晶薄膜 离子束增强沉积 热电阻温度系数

关 键 词:VO2多晶薄膜  离子束增强沉积  热电阻温度系数
文章编号:1000-3290/2004/53(08)/2683-04
收稿时间:2003-11-05

Temperature coefficient of resistance of VO2 polycrystalline film formed by ion beam enhanced deposition
Li Jin-Hua and Yuan Ning-Yi.Temperature coefficient of resistance of VO2 polycrystalline film formed by ion beam enhanced deposition[J].Acta Physica Sinica,2004,53(8):2683-2686.
Authors:Li Jin-Hua and Yuan Ning-Yi
Abstract:The polycrystalline VO2 film was directly prepared from V2O5 powder using the modified ion beam enhanced deposition (IBED) method and a suitable annealing. Testing results show that the IBED polycrystalline VO2 film has a single orientation, an obvious phase transition, a compact structure, and favorable processing properties. The temperature coefficient of resistance (TCR) of the film was up to more 4% and adhered hard to the substrate. The mechanism of the IBED film with higher TCR was discussed in detail. The reason why the film has a high TCR could be as follows: the oxygen vacancy and crystalline boundary in the film was decreased due to the IBED technology; with single oriented and dense texture the activation energy of electrical conduction of the IBED polycrystalline VO2 film was closer to the activation energy of VO2 crystalline in semiconductor phase which is higher than that of the VOx films prepared by other methods
Keywords:polycrystalline VO2 film  ion beam enhanced deposition  temperature coefficient of resistance
本文献已被 维普 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号