| 流体静压力对InSb输运性质的影响 |
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| 引用本文： | 赵有祥,刘世超,俞立志.流体静压力对InSb输运性质的影响[J].物理学报,1966,22(1):83-93. |
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| 作者姓名： | 赵有祥 刘世超 俞立志 |
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| 摘 要： | 在室温和流体静压力达12500公斤/厘米2下,测量了不同掺杂浓度的n型(5×1013—2.3×1018厘米-3和p型(2.6×1014—6.0×1017厘米-3)InSb的霍耳系数和电导率。分析结果发现,霍耳系数公式中散射因子随压力而减小,禁带宽的压力系数不是常数;得出禁带宽、载流子浓度、电子和空穴迁移率与压力的关系,并对压力下的载流子散射机构作了初步讨论。
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| 收稿时间： | 1965-06-16 |
THE EFFECT OF HYDROSTATIC PRESSURE ON THE TRANSPORT PROPERTIES OF InSb |
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| ZHAO YOU-XIANG,LIU SHI-CHAO and YU LI-ZHI.THE EFFECT OF HYDROSTATIC PRESSURE ON THE TRANSPORT PROPERTIES OF InSb[J].Acta Physica Sinica,1966,22(1):83-93. |
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| Authors: | ZHAO YOU-XIANG LIU SHI-CHAO and YU LI-ZHI |
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| Abstract: | Some experimental investigations on the pressure dependence of resistivity and Hall coefficient of n- and p-type InSb samples with different doping (for n-type 5×1013-2.3×1018 cm-3; for p-type 2.6×1014-6.0×1017 cm-3) up to 12,500 kg/cm2 are given. A brief account of the pressure variation of the energy gap, carrier concentration, electron and hole mobilities, and also some preliminary discussion on the scattering mechanism of hole are presented. |
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