Si中Pt的复合行为

本文在不同本底掺杂浓度的n-Si与p-Si的扩Pt深扩散结样品中,利用暗电容瞬态法观察到了零偏压偏置结的耗尽区内,在E_F以上kT范围的深能级处的电子发射与俘获瞬态过程。这类瞬态行为满足该处不同起始条件的深能级的电子变化率方程的解。本文并对发射瞬态的产生提出了一种机理,认为它的存在是与深扩散结的结构密切有关,至于俘获瞬态则与不同杂质的俘获特性密切有关。 关键词：

THE RECOMBINATION BEHAVIOR OF PLATIUM IN SILICON

With dark capacitance transient method, electron emission and capture transient processes at deep level, which is located within an energy range of KT above E_F in depteled region of zero-biased junction, have been observed in Pt diffused deep diffsion junction of n-Si and p-Si with different background doping density. These transient behaviors agree with the solution of electron variation rate equation of deep level for different initial conditions at that place.In this paper, a machanism is also proposed to explain the occurrence of emission transient. It is considered that the origin of emission transient is closely related to the structure in the deep diffusion junctions and the capture transient to the capture characteristic of different impurity.