| Gd掺杂的Bi系2212相单晶电子状态的X射线光电子能谱研究 |
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| 引用本文： | 王楠林,沙健,张其瑞,汪习清,钱逸泰,陈祖耀.Gd掺杂的Bi系2212相单晶电子状态的X射线光电子能谱研究[J].物理学报,1992,41(4):655-660. |
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| 作者姓名： | 王楠林 沙健 张其瑞 汪习清 钱逸泰 陈祖耀 |
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| 作者单位： | (1)浙江大学物理系,杭州,310027; (2)中国科学技术大学物理系结构分析开放研究实验室,合肥,230026; (3)中国科学技术大学应用化学系,合肥,230026 |
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| 基金项目： | 国家自然科学基金;高等学校博士学科点专项科研基金 |
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| 摘 要： | 利用X射线光电子能谱(XPS)研究了Bi系纯2212相超导单晶和Gd掺杂的2212相绝缘体单晶的电子状态的区别。实验结果表明Gd掺杂引起超导电性的变化是由于D2p轨道空穴填充引起。本文还对Cu2p3/2XPS卫星峰与主峰强度之比(Is/Im),Bi-O层性质以及Bi系Fermi能级附近态密度的来源等问题进行了讨论。
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| 关 键 词： | 铋 单晶 超导体 X射线 光电子能谱 |
| 收稿时间： | 1991-04-17 |
X-RAY PHOTOELECTRON SPECTROSCOPY STUDY ON THE ELECTRONIC STATE OF Gd-DOPED 2212 SINGLE CRYSTAL IN Bi-BASED SYSTEM |
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| WANG NAN-LIN,SHA JIAN,ZHANG QI-RUI,WANG XI-QING,QIAN YI-TAI and CHEN ZU-YAO.X-RAY PHOTOELECTRON SPECTROSCOPY STUDY ON THE ELECTRONIC STATE OF Gd-DOPED 2212 SINGLE CRYSTAL IN Bi-BASED SYSTEM[J].Acta Physica Sinica,1992,41(4):655-660. |
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| Authors: | WANG NAN-LIN SHA JIAN ZHANG QI-RUI WANG XI-QING QIAN YI-TAI and CHEN ZU-YAO |
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| Abstract: | XPS measurements have been carried out to study the difference in the electronic state between the pure 2212 single crystal and the Gd-doped 2212 single crystal in Bi-based system. Experimental results show that the suppression of superconductivity by Gd doping is caused by the hole filling in the O2p orbital. The problems, such as that about the ratio of the intensity of the satellite peaks to that of main peak (Is/Im) the physical property of Bi-O layer and the contribution to the density of state (DOS) at Er for the Bi-based 2212 phase have also been discussed. |
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