基于电压变化率的IGBT结温预测模型研究

基于半导体物理和IGBT基本结构,通过合理简化与理论推导,建立了电压变化率模型,对电压变化率的影响因素与温度特性进行了深入研究,得出电压变化率随电压或电流的增大,线性增大;随结温增大,线性减小.基于电压变化率模型,建立了IGBT电压变化率结温预测模型.仿真和实验结果验证了模型的正确性与准确性.对实现IGBT结温在线监测、提高IGBT模块及电力电子装置可靠性具有一定的理论意义和应用价值.

Investigation of the prediction mo del of IGBT junction temp erature based on the rate of voltage change

Based on semiconductor physics and the essential structure of insulated gate bipolar transistor (IGBT), the model of dV_{CE}/\d t is established through reasonable simplification and theoretical derivation. The influencing factors and temperature characteristics of dV_{CE}/\d t are studied in depth. It is concluded that dV_{CE}/\d t increases linearity with the increase of voltage or current, and decreases with the increase of junction temperature also linearly. On the basis of the model for dV_{CE}/\d t, the prediction model of junction temperature is established. Results of simulations and experiments verify the correctness and accuracy of the models. It is significant in theory and practical application for realizing IGBT junction temperature monitoring on-line and improving the reliability of IGBT module and power electronic equipment.
Keywords： carrier concentration carrier mobility rate of voltage change prediction model of junction temperature