氧离子注入纳米金刚石薄膜的微结构和电化学性能研究

在纳米金刚石薄膜中注入剂量为1012cm-2的氧离子,并进行700,800,900和1000?C的真空退火处理,系统研究薄膜的微结构和电化学性能结果表明,氧离子注入未退火(O120)和氧离子注入1000?C退火(O121000)电极的电势窗口分别为4.60 V和3.61 V,远大于其他电极的电势窗口,并且这两个样品的电极传质效率较高,说明氧离子注入和高温退火有利于提高电极的传质效率.红外光谱测试表明,样品O120和O121000的表面没有碳氢基团终止层,而其他样品均含有氢终止层,说明氧离子注入和高温退火破坏了薄膜表面含碳氢基团的氢终止层,提高了薄膜的电化学性能Raman光谱测试结果表明,金刚石含量较高、内应力较小和非晶石墨相无序化程度较大的样品具有较好的电化学性能;并且薄膜晶界处的非晶碳的团簇数量或者尺寸减小,样品的电化学性能提高.

The microstructural and electrochemical properties of oxygen ion implanted nanocrystalline diamond films

The nanocrystalline diamond (NCD) films are implanted by oxygen ions with a dose of 1×10¹² cm^-2 and subsequently annealed at 700, 800, 900 and 1000 ℃, respectively. The microstructure and electrochemical properties of these NCD films are investigated systematically and the results show that the potential windows of the unannealed sample (O120) and 1000 ℃ annealed sample (O121000) increase up to 4.6 V and 3.61 V, respectively. The mass transfer efficiencies of the two samples are also better, indicating that the oxygen ion implantation and 1000 ℃ annealing can improve the mass transfer efficiency of NCD film. The results of infrared spectrum measurements show that there are no hydrogen atoms that are terminated to the surfaces of samples O120 and O121000, while hydrogen atoms terminate to the surfaces of the other samples. It is indicated that oxygen ion implantation and 1000 ℃ annealing can damage hydrogen terminations in the surface, which improves the electrochemical performances of NCD films. Raman spectrum measurements suggest that high content of diamond phase, small internal stress and more disordered amorphous carbon can improve the electrochemical properties of NCD films. When the number or size of sp² carbon clusters in amorphous carbon grain boundaries decreases, the electrochemical properties of NCD films become better.
Keywords： nanocrystalline diamond films oxygen ion implantation electrochemical properties microstructure