不同气氛下SiOx纳米线的制备及形貌、红外、光致发光研究

以N₂/H₂、N₂或NH₃为载气，利用碳辅助化学气相沉积法，常压1140℃下在石英衬底上制备了大量直径为20—300 nm，长数百微米的非晶SiO_x纳米线.制备得到的纳米线具有高度定向生长的特性.利用透射电子显微镜、扫描电子显微镜及电子能谱对SiO_x纳米线的形貌及组分进行了分析，Si与O原子之比为1∶18.傅里叶红外吸收谱显示了非晶氧化硅的三个特征峰（482，806和1095 cm^-1）及1132 cm^-1无序氧化硅结构的强吸收峰.SiO_x纳米线光致发光光谱（PL）在440 nm（283 eV）处具有较强的荧光峰；N₂为载气生长的SiO_x纳米线的PL峰强比NH₃为载气生长的SiO_x纳米线峰强大四个数量级. 关键词： x纳米线')" href="#">SiO_x纳米线 碳辅助化学气相沉积法 傅里叶红外吸收 光致发光

Preparation of SiOx nanowires in different atmosphere, their morphology, PL and FTIR properties

High density SiO_x nanowires were fabricated on a large scale using carbon assisted CVD method by Fe—Al—O catalyst at 1140℃ in flowing N₂/H₂,N₂ and NH₃ atmospheres.The SiO_x nanowires have uniform diameters of 20—300 nm and lengths of up to a few hundred micrometers. SEM, TEM, EDS, FTIR and PL were preformed to characterize the microstructure, composition and optical performance of the nanowires. Energy dispersive X ray spectral analysis reveals that the nanowires consist of Si and O elements in an atomic ratio of approximately 1∶18The nanowires show IR absorption peaks at 482,806,1095 and 1132 cm^-1. The PL peak of the nanowires is located at 440 nm （283eV）.The PL inensity of the SiO_x nanowire （N₂） is 10⁴ times that of the SiO_x nanowire（N₂/NH₃）.