新型多有源区隧道再生光耦合大功率半导体激光器

针对大功率半导体激光器面临的主要困难，提出并实现了一种隧道再生多有源区耦合大光腔 高效大功率半导体激光器机理.该机理能有效地解决光功率密度过高引起的端面灾变性毁坏 、热烧毁和光束质量差等大功率激光器存在的主要问题.采用低压金属有机化合物气相淀积 方法生长了以碳和硅作为掺杂剂的GaAs隧道结、GaAs/InGaAs 应变量子阱有源区和新型多有 源区半导体激光器外延结构，并制备了高性能大功率980nm激光器件.三有源区激光器外微分 量子效率达2.2，2A驱动电流下单面未镀膜激光输出功率高达2.5W. 关键词： 半导体激光器 大功率 金属有机化合物气相沉积

NOVEL COUPLED MULTI-ACTIVE REGION HIGH POWER SEMICONDUCTOR LASERS CASCADED VIA T UNNEL JUNCTION

A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential q uantum efficiency as high as 2.2 and light power output of 2.5W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three a ctive regions.