温和的苯热溶剂条件下GaP纳米棒的形成机理研究

采用金属Na，白磷和GaCl₃为原料，在温和的苯热溶剂条件下制备了直径为20—40nm，长度为200—500nm的GaP纳米棒和直径为20—40nm的球形颗粒.利用X射线衍射(XRD)、透射电子显微镜(TEM)和X射线光电子能谱(XPS)研究了反应条件对产物结晶性和形貌的影响.实验结果表明，当反应温度低于250℃时，产物基本上为GaP纳米棒，并随着反应温度升高，产物逐渐转化为球形纳米颗粒；当反应温度超过280℃时，产物完全为规则的球形.同时，GaP纳米棒的生长遵循SLS生长机理. 关键词： 纳米GaP 苯热 SLS生长机理

Formation mechanism of GaP nanorods under mild Benzene-thermal condition

GaP nanorods with widths of 20—40nm and lengths of 200—500nm, and nanoparticles with diameters of 20—40nm were synthesized via the mild benzene-thermal route, using Na, P and GaCl₃ as the starting materials. X-ray powder diffraction, Transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the morphology and crystal structure of the products. The results indicated that when the reaction temperature is lower than 250℃, the products consist almost is GaP nanorods. The nanorods change into nanoparticles gradually with increasing temperature. When the reaction temperature exceed 280℃, the products are regularly particles. The reaction proceeds through a metallic gallium intermediate and a solution-liquid-solid mechanism is proposed for the one-dimensional growth.