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HgS/CdS/HgS球状纳米系统电子的能量与寿命以及概率分布
引用本文:郑瑞伦,陈志谦,张翠玲,刘俊.HgS/CdS/HgS球状纳米系统电子的能量与寿命以及概率分布[J].物理学报,2003,52(9):2284-2289.
作者姓名:郑瑞伦  陈志谦  张翠玲  刘俊
作者单位:西南师范大学物理系,重庆 400715
基金项目:国家自然科学基金(批准号:10147207)资助的课题.
摘    要:建立了HgS/CdS/ HgS球状纳米系统物理模型和电子状态满足的方程.应用S矩阵理论,探讨了 s态电子的能量和寿命以及概率分布随势垒和势阱宽度的变化规律.结果表明:电子能量和寿 命随垒势宽度增大而增大;电子能量随阱宽增大而减小,而寿命随阱宽增大而增大;层间相 互作用对结果有重要影响. 关键词: 球状纳米系统 电子能量和寿命 电子概率分布 势垒势阱宽度

关 键 词:球状纳米系统  电子能量和寿命  电子概率分布  势垒势阱宽度
文章编号:1000-3290/2003/52(09)2284-06
收稿时间:8/7/2002 12:00:00 AM
修稿时间:2002年8月7日

Electronic energy and life span probability distribution of the HgS/CdS/HgS sphe rical nanometer system
Zheng Rui-Lun,Chen Zhi-Qian,Zhang Cui-Ling and Liu Jun.Electronic energy and life span probability distribution of the HgS/CdS/HgS sphe rical nanometer system[J].Acta Physica Sinica,2003,52(9):2284-2289.
Authors:Zheng Rui-Lun  Chen Zhi-Qian  Zhang Cui-Ling and Liu Jun
Abstract:The physical Model for the spherical HgS/CdS/HgS nanometer system and equations satistied by the electron motion are built. The energy and life span of s-electr on and the variation of the probability distribution with the width of the poten tial barrier and well are probed. Some important results indicate that the ener gy and life span of the electron increase with the increase of the potential bar rier width; electronic energy decreases with the increase of the potential well width, however the electronic life span is increased. The interaction between la yers has an important influence on the results.
Keywords:spherical nanometer system  electronic energy  life span and probabi lity distribution  potenlial barrier width  potential well width
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