La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在Si (111) 基片上分别制备了LaNiO₃(LNO)底电极和LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr_0.5Ti_0.5)O₃ (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流. 关键词： PZT薄膜 铁电性 漏电流 0.3Sr_0.7TiO₃')" href="#">La_0.3Sr_0.7TiO₃

Enhanced ferroelectricity of Pb(Zr0.5Ti0.5)O3 film by the introduction of La0.3Sr0.7TiO3 template layer

LaNiO₃(LNO) and LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO) bottom electrodes were prepared on Si(111) substrates by sol-gel process. Then Pb (Zr_0.5Ti_0.5)O₃ (PZT) ferroelectric films were then deposited on the bottoms also by sol-gel process. XRD showed that both of the PZT films have perovskite structure. The one on LNO bottom adopts (100) preferred orientation and the one on LNO/LSTO bottom adopts random orientation. The results of ferroelectric measurement showed that the ferroelectricity of the PZT film on LNO/LSTO bottom electrode was substantially enhanced compare with the one on LNO bottom electrode. The coercive field was also enhanced. The film on LNO/LSTO bottom electrode has larger dielectric constant and leakage current.