激光限制结晶技术制备nc-Si/SiO2多层膜

在等离子体增强化学气相淀积系统中，采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:H/SiO_2多层膜.在激光诱导限制结晶原理基础上，使用KrF准分子脉冲激光为辐照源，对aSi:H/SiO_2多层膜进行辐照，使纳米级厚度的aSi:H子层晶化.Raman散射谱和电子衍射谱的结果表明，经过激光辐照后纳米Si颗粒在原始的aSi:H子层内形成，晶粒尺寸可以根据aSi:H层的厚度精确控制.还研究了样品的光致发光（PL）特性以及激光辐照能量密度对PL性质的影响. 关键词： 脉冲激光 多层膜 限制结晶

Nc-Si/SiO2 multilayer prepared by the method of laser constrained crystallization

We prepared a-Si:H/SiO 2 multilayer by using layer by layer deposition of a-Si:H sublayer and in-situ plasma oxidation in the plasma-enhanced chemical vapor deposition system. Based on the constrained crystallization principle of a-Si:H sublayer,we employed krF excimer laser to irradiate a-Si:H sublayer and crystallize it. The results of Raman scattering spectroscopy and electron diffraction show that nanocrystal silicon (nc-Si) has been formed within the as-deposited a-Si:H/SiO 2 multilayer,and that the size of nc-Si can be controlled precisely according to the thickness of a-Si:H sublayer. We also studied the photoluminescence(PL) property of the sample and the effect of laser energy density on PL.