| 气体滞留时间对高速沉积的微晶硅薄膜性能的影响分析 |
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| 引用本文： | 郭群超,耿新华,孙建,魏长春,韩晓艳,张晓丹,赵颖.气体滞留时间对高速沉积的微晶硅薄膜性能的影响分析[J].物理学报,2007,56(5):2790-2795. |
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| 作者姓名： | 郭群超 耿新华 孙建 魏长春 韩晓艳 张晓丹 赵颖 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所天津市重点实验室，光电信息技术科学教育部重点实验室，天津 300071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 实现高速沉积对于薄膜微晶硅太阳电池产业化降低成本是一个重要手段.采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术，实现了微晶硅硅薄膜的高速沉积，并通过改变气体总流量改变气体滞留时间，考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响.采用沉积速率达到12?/s的高速微晶硅工艺制备微晶硅电池，电池效率达到了5.3％.
关键词：
气体滞留时间
高速沉积
微晶硅
超高频等离子体增强化学气相沉积
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| 关 键 词： | 气体滞留时间 高速沉积 微晶硅 超高频等离子体增强化学气相沉积 |
| 文章编号： | 1000-3290/2007/56(05)/2790-06 |
| 收稿时间： | 2006-08-25 |
| 修稿时间： | 08 25 2006 12:00AM |
Role of gas residence time in the deposition rate and properties of microcrystalline silicon films |
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| Guo Qun-Chao,Geng Xin-Hua,Sun Jian,Wei Chang-Chun,Han Xiao-Yan,Zhang Xiao-Dan,Zhao Ying.Role of gas residence time in the deposition rate and properties of microcrystalline silicon films[J].Acta Physica Sinica,2007,56(5):2790-2795. |
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| Authors: | Guo Qun-Chao Geng Xin-Hua Sun Jian Wei Chang-Chun Han Xiao-Yan Zhang Xiao-Dan Zhao Ying |
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| Institution: | Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin, Institute of Photoelectronics Thin Film Devices and Technique of Nankai University, Tianjin 300071, China |
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| Abstract: | To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells. Deposition of μc-Si:H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper. The influence of gas residence time on de position rate and the photoelectric and micro structural properties in the CVD process were studied by changing total gas flow. As a result, the efficiency of the microcrystalline silicon solar cell prepared at deposition rate 12?/s reached 5.3%.
Keywords：
gas residence time
high deposition rate
microcrystalline silicon
very-high-frequency plasma-enhanced chemical vapor deposition |
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| Keywords: | gas residence time high deposition rate microcrystalline silicon very-high-frequency plasma-enhanced chemical vapor deposition |
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