| 4H-SiC中基面位错发光特性研究 |
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| 引用本文： | 苗瑞霞,张玉明,汤晓燕,张义门.4H-SiC中基面位错发光特性研究[J].物理学报,2011,60(3):37808-037808. |
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| 作者姓名： | 苗瑞霞 张玉明 汤晓燕 张义门 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071 |
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| 基金项目： | 国家自然科学基金(批准号: 60876061),陕西13115创新工程(批准号: 2008ZDKG-30),中央高校基本科研业务费专项资金(批准号:JY10000925009)和国防基金(批准号: 9140A08050508)资助的课题. |
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| 摘 要： | 本文利用阴极荧光(CL)和选择性刻蚀的方法对4H-SiC同质外延材料中基面位错的发光特性进行了研究. 结果表明螺型基面位错(BTSD)和混合型基面位错(BMD)分别具有绿光和蓝绿光特性,其发光峰分别在530 nm附近和480 nm附近. 从测试结果中还发现BMD 的发光位较BTSD有所蓝移,分析认为BTSD位错芯附近原子沿伯格斯
关键词：
4H-SiC
基面位错
发光特性
禁带宽度
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| 关 键 词： | 4H-SiC 基面位错 发光特性 禁带宽度 |
| 收稿时间： | 2010-05-27 |
Investigation of luminescence properties of basal plane dislocations in 4H-SiC |
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| Miao Rui-Xia,Zhang Yu-Ming,Tang Xiao-Yan,Zhang Yi-Men.Investigation of luminescence properties of basal plane dislocations in 4H-SiC[J].Acta Physica Sinica,2011,60(3):37808-037808. |
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| Authors: | Miao Rui-Xia Zhang Yu-Ming Tang Xiao-Yan Zhang Yi-Men |
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| Institution: | Miao Rui-Xia Zhang Yu-Ming Tang Xiao-Yan Zhang Yi-Men (School of Microelectronics,Xidian University,Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,Xi’an 710071,China) |
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| Abstract: | Luminescence properties of basal plane dislocations in 4H-SiC are studied by means of cathodoluminescence( CL) and defect selective etching. It is found that basal plane screw dislocations ( BTSD ) and basal plane mixed dislocations (BMD) have green and blue-green luminescence properties,respectively. The spectrum peaks near 530 nm and 480 nm correspond to BTSD and BMD,respectively. It is found from measurement that the luminescence peak from BMD is blue-shifted. The atoms of BTSD near the dislocation core ... |
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| Keywords: | 4H-SiC basal plane dislocation luminescence properties band gap |
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