离子束增强沉积制备p型氧化锌薄膜及其机理研究

采用离子束增强沉积方法在Si和SiO₂/Si衬底上制备In-N共掺杂ZnO薄膜(INZO)，溅射靶是用ZnO和2 atm% In₂O₃粉体均匀混合并压制而成，在氩离子溅射ZnO靶的同时，氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向，并且为p型导电，电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火，对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析. 关键词： 氧化锌薄膜 p型掺杂 离子束增强沉积

Preparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method

In-N codoped ZnO films were prepared on Si and SiO₂/Si substrates by modified ion beam enhanced deposition method. ZnO mixed with 2 atm % In₂O₃ powder was used as sputtering target and during the deposition N⁺/Ar⁺ mixed beam was implanted into the deposited films. The XRD results showed that all polycrystalline In-N codoped ZnO films deposited on Si and SiO₂ substrates have a preferred (002) orientation and showed p-type conduction. The as-deposited films were annealed in N₂ and O₂. After annealed in N₂ the lowest resistivity of p-type In-N codoped ZnO films was 0.9Ωcm. The dependence of film structure and electrical properties on deposition and annealing condition were discussed.