| 抗辐射双极n-p-n晶体管的研究 |
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| 引用本文： | 翟亚红,李平,张国俊,罗玉香,范雪,胡滨,李俊宏,张健,束平.抗辐射双极n-p-n晶体管的研究[J].物理学报,2011,60(8):88501-088501. |
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| 作者姓名： | 翟亚红 李平 张国俊 罗玉香 范雪 胡滨 李俊宏 张健 束平 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054 |
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| 基金项目： | 电子薄膜与集成器件国家重点实验室创新基金(批准号:CXJJ200905)资助的课题. |
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| 摘 要： | 根据发射极周长与面积比(P/A)最小的原则,优化设计了双极n-p-n晶体管的尺寸参数,采用20 V双极型工艺设计制造了三种抗辐射加固的n-p-n晶体管.测试表明,在总剂量为1 kGy的辐照条件下,所制备的发射结加固型n-p-n晶体管和含有重掺杂基区环的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高10%-15%;而两种加固措施都有的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高15%-20%.
关键词：
双极n-p-n晶体管
辐射效应
电流增益
抗辐射
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| 关 键 词： | 双极n-p-n晶体管 辐射效应 电流增益 抗辐射 |
| 收稿时间： | 6/8/2010 12:00:00 AM |
Radiation-resistant bipolar n-p-n transistor |
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| Zhai Ya-Hong,Li Ping,Zhang Guo-Jun,Luo Yu-Xiang,Fan Xue,Hu Bin,Li Jun-Hong,Zhang Jian and Su Ping.Radiation-resistant bipolar n-p-n transistor[J].Acta Physica Sinica,2011,60(8):88501-088501. |
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| Authors: | Zhai Ya-Hong Li Ping Zhang Guo-Jun Luo Yu-Xiang Fan Xue Hu Bin Li Jun-Hong Zhang Jian and Su Ping |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | Bipolar n-p-n transistor geometrical parameters are optimized based on the principle ofminimizing the perimeter-to-area ratio (P/A).Three types of radiation-resistant n-p-n transistors are developed and fabricated in the 20 V bipolar process.The first is emitter-base junction hardened n-p-n transistor.The second has heavily boron doped base ring.And the last uses both radiation-resistant measurements.The experimental results indicate that after irradiated by the radiation of total dose of 1 kGy,in current g... |
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| Keywords: | bipolar n-p-n transistor radiation effect current gain radiation-resistant |
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