非晶态InSb及其亚稳中间相的霍耳效应和超导电性

实验研究了非晶态InSb及其结晶相变过程中的霍耳效应. 结果表明, 金属型非晶态InSb以电子导电为主, 半导体型非晶态InSb 以空穴导电为主; 金属型非晶态InSb中的第一电导跃变是一种由类液非晶态到类点阵非晶态的结构弛豫过程; 第三电导跃变是富In或富Sb 固溶体相在半导体InSb 晶界上析出并集中所引起的; 金属型非晶态I站b 的三种不同的结晶相变类型具有鲜明不同的输运性质; 第二电导跃变峰所对应的亚稳金属相超导Tc的提高, 可能主要起因于电子浓度的增加. 关键词：

HALL EFFECTS AND SUPERCONDUCTIVITY OF ANORPHOUS InSb AND ITS METASTABLE INTERMEDIATE PHASES IN THE PROCESS OF THE CRYSTALLIZATION PHASE TRANSITION

Hall effects of amorphous InSb and its metastable intermediate phases which appear in the process of thee crystallization phase transition have been studied. Experimental results show that the conduction of the electron is dominative in the metal-type amorphous InSb and the conduction of the hole is dominative in the semiconductor-type amorphous InSb. The first jump of the conductance is a process of the structure relaxation from the liquid-like amorphous state to the lattice-like one; the third jump of the conductance was caused by In-Sb solid solution with the rich In or rich Sb which was separated out and segregated on the grain boundaries. The three types of the crystallization phase transition of the metal-type amorphous InSb present obviously different transportion hehaviours. The rise of superconducting Tc of the metastable crystalline metallic phase which corresponds to the peak of the second jump of the conductance originates possibly from the increase of the electron concentration.
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