氧空位对钴掺杂氧化锌半导体磁性能的影响

从实验和理论上阐述了氧空位对Co掺杂ZnO半导体磁性能的影响.采用磁控溅射法在不同的氧分压下制备了Zn_095Co_005O薄膜，研究了氧分压对薄膜磁性能的影响.实验结果表明，高真空条件下制备的Zn_095Co_005O薄膜具有室温铁磁性，提高氧分压后制备的薄膜铁磁性逐渐消失.第一性原理计算表明，在Co掺杂ZnO体系中引入氧空位有利于降低铁磁态的能量，铁磁态的稳定性与氧空位和Co之间的距离密切相关. 关键词： Co掺杂ZnO 稀磁半导体 第一性原理计算 氧空位缺陷

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductor

Zn_095Co_005O films were prepared under different oxygen partial pressure P by magnetron sputtering. The effect of P on the magnetic and electrical properties was investigated. The effect of oxygen vacancy on the magnetic properties was also calculated by first-principles calculation. The experimental results indicated that Zn_095Co_005O films showed room-temperature ferromagnetism and high electron concentration when they were deposited under high vacuum. The ferromagnetism disappeared and the electron concentration decreased sharply when P was increased. The calculated results indicated that the energy of ferromagnetic states could be decreased by introducing oxygen vacancy in Co-doped ZnO system. The stability of ferromagnetism was determined by the distance between oxygen vacancy and Co atoms.