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| 氮离子轰击能量对ta-C:N薄膜结构的影响 | |
| 引用本文： | 韩亮,邵鸿翔,何亮,陈仙,赵玉清.氮离子轰击能量对ta-C:N薄膜结构的影响[J].物理学报,2012,61(10):106803-106803. |
| 作者姓名： | 韩亮 邵鸿翔 何亮 陈仙 赵玉清 |
| 作者单位： | 1. 西安电子科技大学技术物理学院,西安,710071 2. 洛阳理工学院,洛阳,471023 3. 西安交通大学电子与信息工程学院,西安,710049 |
| 基金项目： | 陕西省"13115"科技创新工程重大科技专项(批准号: 2009DKG-29)和中央高校基本 科研业务费专项资金资助的课题. |
| 摘 要： | 利用磁过滤真空阴极电弧技术制备了sp3键含量不小于80%的四面体非晶碳薄膜(ta-C), 然后通过氮离子束改性技术制备了氮掺杂的四面体非晶碳(ta-C:N)薄膜. 利用Raman光谱和X射线光电子能谱对薄膜结构的分析,研究了氮离子轰击能量对ta-C:N薄膜结构的影响. 氮离子对ta-C薄膜的轰击,形成了氮掺杂的ta-C:N薄膜. 氮离子轰击诱导了薄膜中sp3键向sp2键转化, 以及CN键的形成.在ta-C:N薄膜中,氮掺杂的深度和浓度随着氮离子能量的增大而增大. ta-C:N薄膜中sp2键的含量和sp2键团簇的尺寸随着氮离子轰击能量的增大而增加; 在ta-C:N薄膜中, CN键主要由C-N键和C＝N键构成, C-N 键的含量随着氮离子轰击能量的增大而减小,但是C＝N 键含量随着氮离子轰击能量的增大而增大.在ta-C:N薄膜中不含有C≡N键结构. |
| 关 键 词： | ta-C:N薄膜 氮离子 Raman光谱 X射线光电子能谱 |
| 收稿时间： | 2011-09-16 |
The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film |
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| Han Liang,Shao Hong-Xiang,He Liang,Chen Xian,Zhao Yu-Qing.The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film[J].Acta Physica Sinica,2012,61(10):106803-106803. | |
| Authors: | Han Liang Shao Hong-Xiang He Liang Chen Xian Zhao Yu-Qing |
| Institution: | 1. School of Technical Physics, Xidian University, Xi'an 710071, China; 2. Luoyang Institute of Science and Technology, LuoYang 471023, China; 3. School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China |
| Abstract: | The tetrahedral amorphous carbon(ta-C) films with more than 80%sp3 in fraction are deposited by the filtered cathode vacuum arc technique.Then the energetic nitrogen(N) ions are used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon(ta-C:N) films.The composition and the structure of the films are analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy.The result shows that the bombardment of energetic nitrogen ions can form CN bonds,convert C—C bonds into C=C bonds,and increase the size of sp~2 cluster.The CN bonds are composed of C=N bonds and C—N bonds.The content of C=N bonds increases with the N ion bombardment energy increasing,but the content of C—N bonds is inversely proportional to the increase of nitrogen ion energy.In addition,C=N bonds do not exist in the films. |
| Keywords: | nitrogenated tetrahedral amorphous carbon nitrogen ion visible Raman spectrum X-ray photoelectron spectroscopy |
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