不同剂量C离子注入Si单晶中Si1-xCx合金的形成及其特征

室温下在单晶Si中注入(0.6—1.5)%的C原子，利用高温退火固相外延了Si_1-xC_x合金，研究了不同注入剂量下Si_1-xC_x合金的形成及其特征.如果注入C原子的浓度小于0.6%，在850—950℃退火过程中，C原子容易与注入产生的损伤缺陷结合，难于形成Si_1-xC_x合金相.随注入C原子含量的增加，C原子几乎全部进入晶格位置形成Si_1-xC_{x 关键词： 1-x}C_x合金')" href="#">Si_1-xC_x合金 离子注入 固相外延

THE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES

Carbon ions with concentration of (0.6—1.5)% were implanted into silicon crystals at room temperature and Si_1-xC_x alloys were grown by solid phase epitaxy with high temperature annealing. The formation and characteristics of Si_1-xC_x alloys under different implanted carbon doses were studied. If the implanted carbon atom concentration was less than 0.6%, carbon atoms would tend to combine with the defects produced during implantation and it was difficult for Si_1-xC_x alloys to form during annealing at 850—950℃. With the increase of implanted C concentration, almost all implanted carbon atoms would occupy substitution positions to form Si_1-xC_{x alloys, but only part of implanted carbon atoms would occupy the substitution position to form Si1-xCx alloys as the implanted dose increased to 1.5%. Most Si1-xCx alloy phases would vanish as the annealing temperature was increased higher.}