| 有边界条件的忆阻元件模型及其性质 |
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| 引用本文： | 张旭,周玉泽,闭强,杨兴华,俎云霄.有边界条件的忆阻元件模型及其性质[J].物理学报,2010,59(9):6673-6680. |
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| 作者姓名： | 张旭 周玉泽 闭强 杨兴华 俎云霄 |
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| 作者单位： | 北京邮电大学电子工程学院,北京 100876 |
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| 基金项目： | 北京邮电大学大学生创新性实验计划资助的课题. |
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| 摘 要： | 对第四类基本电路元件——忆阻元件的基本特性进行了研究,分别建立了无边界条件和有边界条件的忆阻元件的积分形式的数学模型.对有边界条件的数学模型进行了仿真,分析了有边界条件下电源频率和掺杂比、初始掺杂宽度等模型参数对电流、电压电流关系、磁链电荷关系等元件特性的影响,得出了相关的结论.
关键词：
忆阻元件
边界条件
数学模型
性质
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| 关 键 词： | 忆阻元件 边界条件 数学模型 性质 |
| 收稿时间： | 2009-12-23 |
The mathematical model and properties of memristor with border constraint |
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| Zhang Xu,Zhou Yu-Ze,Bi Qiang,Yang Xing-Hua,Zu Yun-Xiao.The mathematical model and properties of memristor with border constraint[J].Acta Physica Sinica,2010,59(9):6673-6680. |
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| Authors: | Zhang Xu Zhou Yu-Ze Bi Qiang Yang Xing-Hua Zu Yun-Xiao |
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| Institution: | School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China;School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China;School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China;School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China;School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China |
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| Abstract: | The properties of memristor as the fourth basic circuit element are studied. The mathematical models in integral form for memristors with and without border constraint are developed. The simulation is done for the memristor with border constraint. The influences of the source frequency and model parameters on the memristor’s properties are analyzed and some conclusions are drawn. The model parameters considered include the doping ratio and the initial doping width, and their influnce on the current, voltage-current relation and flux-charge relation of the memrister are investigaled. |
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| Keywords: | memristor border constraint mathematical model property |
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