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石墨烯纳米网电导特性的能带机理:第一原理计算
引用本文:徐贤达,赵磊,孙伟峰.石墨烯纳米网电导特性的能带机理:第一原理计算[J].物理学报,2020(4):193-201.
作者姓名:徐贤达  赵磊  孙伟峰
作者单位:哈尔滨理工大学电气与电子工程学院工程电介质及其应用教育部重点实验室黑龙江省电介质工程重点实验室
基金项目:国家自然科学基金(批准号:51337002);中国博士后科学基金(批准号:2013M531058)资助的课题~~
摘    要:通过第一原理电子结构计算来研究有序多孔纳米网的电导特性变化的能带机理.能带结构分析结果表明:石墨烯纳米网超晶格(3m,3n)(m和n为整数)的电子本征态在布里渊区中心点发生四重简并;碳空位孔洞规则排列形成的石墨烯纳米网具有由简并态分裂形成的宽度可调带隙,无论石墨烯的两个子晶格是否对等.在具有磁性网孔阵列的石墨烯纳米网中,反铁磁耦合使对称子晶格的反演对称性增加了一项量子限制条件,导致能带结构在K点的二重简并态分裂成带隙.通过控制网孔密度能够有效调节石墨烯纳米网的带隙宽度,为实现新一代石墨烯纳米电子器件提供了理论依据.

关 键 词:石墨烯纳米网  电子结构  第一原理计算  电导特性

First-principles on the energy band mechanism for modifying conduction property of graphene nanomeshes
Xu Xian-Da,Zhao Lei,Sun Wei-Feng.First-principles on the energy band mechanism for modifying conduction property of graphene nanomeshes[J].Acta Physica Sinica,2020(4):193-201.
Authors:Xu Xian-Da  Zhao Lei  Sun Wei-Feng
Institution:(Key Laboratory of Engineering Dielectrics and Its Application,Ministry of Education,Heilongjiang Provincial Key Laboratory of Dielectric Engineering,School of Electrical and Electronic Engineering,Harbin University of Science and Technology,Harbin 150080,China)
Abstract:By means of first-principles electronic structure calculations,the ordered graphene nanomeshes with patterned hexagonal vacancy holes are theoretically studied to explore the modification mechanism of electrical conduction on graphene atomic monolayers.According to pseudopotential plane wave first-principles scheme based on density functional theory,the band structures of graphene nanomeshes are calculated to analyze the electrical conductance in correlation with the superlattice symmetry and vacancy hole magnetism.Based on the structural features and topological magnetism of Y-shaped nodes between the nanopores on the atomic monolayer of graphene,the graphene nanomeshes are classified into three types.The quadruplet degeneracy and splitting of electronic states at Brillouin zone center are investigated by comparing the band structures of graphene nanomeshes and analogical superlattices.The effects of inversion symmetry and supercell size on the opening band-gap at Dirac cone are elaborately analyzed with the consideration of antiferromagnetic coupling and hydrogen passivation at the magnetic edge of nanopores on graphene nanomeshes.The band-structure calculation results indicate that the(3m,3n)(m and n are integers)superlattices have fourfold degenerate electronic states at center point of Brillouin zone,which can be effectively splitted by regularly arranging porous atomic vacancy to make the(3m,3n)nanomesh,resulting in adjustable band-gap no matter whether or not the sublattices keeping in equivalence.In the nanomeshes formed by patterned holes with magnetic edge,the antiferromagnetic coupling adds a quantum parameter to the inversion symmetry so as to break the sublattice equivalence,opening band-gap at the twofold degenerate K point.Nevertheless,the hydrogen passivation at the edge of magnetic nanopores will convert the magnetic graphene nanomeshes into non-magnetic and eliminate the band-gap at K point.The band-gap of graphene nanomeshes could also be controlled by changing the density of nanopores,suggesting a graphene nanomaterial with adjustable band-gap that can be designed by controlling the mesh pore spacing.The graphene nanomeshes represent a new mechanism of forming band-gap and thus promise a strategy for achieving special electrical properties of graphene nanostructures.These results also theoretically demonstrate that the nano-graphene is a prospective candidate with flexibly adjustable electrical properties for realizing multivariate applications in new-generation nano-electronics.
Keywords:graphene nanomesh  electronic structure  first-principles calculation  conduction property
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