AlGaN/AlN/GaN高电子迁移率器件的电容电压特性的经验拟合

利用蓝宝石衬底的AlGaN/AlN/GaN 高电子迁移率器件(HEMT)的电容电压(C-V)特性,对电子费米能级与二维电子气面密度的经验关系进行表征,其结果对器件电荷控制模型的建立,跨导及电容表达式的简化有重要意义.文章创新性地提出参数α用于表征二维势阱对沟道电子限制能力,并认为α越小则二维势阱的沟道电子限制能力越强.利用上述经验关系来拟合电容,可以获得与实测电容很好的一致性. 关键词： HEMT 费米能级 C-V特性')" href="#">C-V特性 二维势阱的电子限制能力

The experiential fit of the capacitance-voltage characteristics of the AlGaN/AlN/GaN high electron mobility transistors

This paper expresses the experiential relationship between Fermi level and the density of two-dimensional electron gas, based on the capacitance voltage (C-V) characteristics of the AlGaN/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate. The expression provides important references for establishing the device charge control model and simpliying the transconductance and capacitance. Parameter α is introduced for describing the ability for the two-dimensional potential well to restrict electrons, and we believe that the smaller the value of α, the stronger the restricting ability is. A coherent fitting effect, compared with the measurement, is obtained by making use of the experiential relationship said above.